| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,855 pcs
|
1855 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NTMS5835NLR2G from On Semiconductor is a high-performance N-Channel MOSFET. It offers a drain-to-source voltage (Vdss) of 40V and a continuous drain current (Id) of 9.2A at 25°C ambient temperature. The MOSFET exhibits a low on-resistance (Rds On) of 10mOhm at 10A and 10V gate-source voltage, and 14mOhm at 10A and 4.5V gate-source voltage. Its input capacitance (Ciss) is 2115 pF at 20V, and the gate charge (Qg) is 50 nC at 10V.
This device operates within a junction temperature range of -55°C to 150°C. It has a maximum power dissipation of 1.5W at 25°C ambient temperature. The NTMS5835NLR2G is available in a compact 8-SOIC surface mount package, making it suitable for space-constrained designs. It is Pb-Free and Halogen Free, complying with modern environmental standards.
Key electrical characteristics include a gate threshold voltage (Vgs(th)) of 3V at 250µA and a maximum gate-to-source voltage of ±20V. The pulsed drain current (Idm) can reach up to 48A. Thermal performance is supported by a junction-to-ambient thermal resistance of 82°C/W under steady-state conditions on a standard FR4 board.
This MOSFET is designed for applications requiring efficient power switching and low conduction losses. Its robust construction and reliable performance make it a suitable choice for various electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 40V.
The maximum continuous drain current (Id) is 9.2A at 25°C ambient temperature.
The on-resistance (Rds On) is a maximum of 10mOhm at 10A and 10V gate-source voltage.
The operating junction and storage temperature range is -55°C to 150°C.
It is available in an 8-SOIC package for surface mounting.
Yes, the device is RoHS3 Compliant.
Yes, the device is Halogen Free.