| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,803 pcs
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1803 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel | |
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The IXFH320N10T2 is a N-Channel enhancement mode Power MOSFET from IXYS, part of the TrenchT2 HiperFET series. It is designed for high current handling with a continuous drain current rating of 320A at 25°C and a pulsed current capability of 800A. The device features a low drain-source on-resistance of 3.5mΩ (max) at VGS=10V, enabling efficient power switching.
The MOSFET has a drain-source voltage rating of 100V and a gate threshold voltage of 2.0V to 4.0V. It is avalanche rated with an energy capability of 1.5J and includes a fast intrinsic diode with reverse recovery time of 98ns. The device is suitable for applications such as synchronous rectification, DC-DC converters, and motor drives.
The IXFH320N10T2 is offered in a TO-247 (IXFH) through-hole package, specifically the TO-247AD variant. The package has a weight of 6g and a mounting torque of 1.13 Nm. The device operates over a junction temperature range of -55°C to 175°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $20.19 | $20.19 |
| 10+ | $12.63 | $12.63 |
| 120+ | $12.16 | $12.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage rating is 100V.
It is available in TO-247-3 (TO-247AD) through-hole package.
The junction temperature range is -55°C to 175°C.
Yes, it is listed as RoHS3 compliant.
320A at Tc=25°C.
Maximum 3.5mΩ at VGS=10V, ID=100A.
Yes, avalanche energy rating is 1.5J at Tc=25°C.