IXFH320N10T2 IXFH320N10T2 is a 100V, 320A N-Channel Power MOSFET from IXYS. It features low on-resistance of 3.5mΩ and is available in TO-247AD package.
Mfr Part #:

IXFH320N10T2

Available from 1 distributors
Mfr Name: IXYS
IXYS
IXFH320N10T2 is a 100V, 320A N-Channel Power MOSFET from IXYS. It features low on-resistance of 3.5mΩ and is available in TO-247AD package.
Total Stock: 1,803 pcs
$ Price Range: $12.16 - $20.19

IXFH320N10T2 Available from 1 distributor

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Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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IXFH320N10T2 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
Weight

IXFH320N10T2 Description

Short technical summary and product information.

The IXFH320N10T2 is a N-Channel enhancement mode Power MOSFET from IXYS, part of the TrenchT2 HiperFET series. It is designed for high current handling with a continuous drain current rating of 320A at 25°C and a pulsed current capability of 800A. The device features a low drain-source on-resistance of 3.5mΩ (max) at VGS=10V, enabling efficient power switching.

 

The MOSFET has a drain-source voltage rating of 100V and a gate threshold voltage of 2.0V to 4.0V. It is avalanche rated with an energy capability of 1.5J and includes a fast intrinsic diode with reverse recovery time of 98ns. The device is suitable for applications such as synchronous rectification, DC-DC converters, and motor drives.

 

The IXFH320N10T2 is offered in a TO-247 (IXFH) through-hole package, specifically the TO-247AD variant. The package has a weight of 6g and a mounting torque of 1.13 Nm. The device operates over a junction temperature range of -55°C to 175°C.

IXFH320N10T2 Quick Information

Product Type: Power MOSFET
Series: TrenchT2
Canonical Name: IXFH320N10T2
Subcategory: Single MOSFET

IXFH320N10T2 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IXFH320N10T2 Estimated Pricing

Qty Low High
1+ $20.19 $20.19
10+ $12.63 $12.63
120+ $12.16 $12.16

Estimated market price range - modelled values for guidance only, not live distributor offers.

IXFH320N10T2 Features

  • 100V drain-source voltage rating.
  • 320A continuous drain current capability.
  • Low 3.5mΩ on-resistance.
  • Fast intrinsic diode with 98ns recovery.
  • Avalanche rated at 1.5J.

IXFH320N10T2 Applications

  • Suitable for synchronous rectification circuits.
  • Used in DC-DC converter designs.
  • Ideal for battery charging applications.
  • For motor drive and chopper circuits.

IXFH320N10T2 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating voltage of the IXFH320N10T2?

The drain-source voltage rating is 100V.

What is the package type of this MOSFET?

It is available in TO-247-3 (TO-247AD) through-hole package.

What is the operating temperature range?

The junction temperature range is -55°C to 175°C.

Is the IXFH320N10T2 RoHS compliant?

Yes, it is listed as RoHS3 compliant.

What is the maximum continuous drain current?

320A at Tc=25°C.

What is the on-resistance of the device?

Maximum 3.5mΩ at VGS=10V, ID=100A.

Does it have an avalanche rating?

Yes, avalanche energy rating is 1.5J at Tc=25°C.

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