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DMT10H009SPS-13 100V N-Channel Enhancement Mode MOSFET in PowerDI5060-8 package. Designed for low on-resistance and high efficiency.
Mfr Part #:

DMT10H009SPS-13

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
100V N-Channel Enhancement Mode MOSFET in PowerDI5060-8 package. Designed for low on-resistance and high efficiency.
✓ Total Stock: 1,803 pcs
$ Price Range: $0.60 - $2.00

DMT10H009SPS-13 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Xingangxin ✓
Non-Authorised Inventory information
1,803 pcs
On Request
1803 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

DMT10H009SPS-13 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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DMT10H009SPS-13 Description

Short technical summary and product information.

The DMT10H009SPS-13 is a 100V N-Channel Enhancement Mode MOSFET from Diodes Incorporated. It features a maximum drain-source voltage of 100V and is housed in a thermally efficient PowerDI5060-8 package. The device is designed to minimize RDS(ON) while maintaining superior switching performance, making it suitable for high-efficiency power management applications.

 

Key electrical characteristics include a low on-resistance of 8.5mΩ at VGS = 10V and a maximum continuous drain current of 80A at TC = 25°C. The MOSFET is 100% unclamped inductive switching (UIS) tested in production for enhanced reliability. It also offers fast switching speed and low input capacitance.

 

The device is lead-free, RoHS compliant, and halogen- and antimony-free (Green). The compact PowerDI5060-8 package has a profile of less than 1.1mm, suitable for thin applications. Moisture sensitivity is Level 1 per J-STD-020.

DMT10H009SPS-13 Quick Information

Product Type: N-Channel MOSFET
Canonical Name: DMT10H009SPS-13
Subcategory: Single MOSFET

DMT10H009SPS-13 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

DMT10H009SPS-13 Estimated Pricing

Qty Low High
1+ $2.00 $2.00
10+ $1.26 $1.26
100+ $0.84 $0.84
500+ $0.66 $0.66
1,000+ $0.60 $0.60
2,500+ $0.60 $0.60

Estimated market price range - modelled values for guidance only, not live distributor offers.

DMT10H009SPS-13 Features

  • Low RDS(on) minimizes on-state losses.
  • Thermally efficient PowerDI5060-8 package.
  • 100% UIS tested for reliability.
  • RoHS compliant and halogen-free design.
  • Fast switching speed with low capacitance.

DMT10H009SPS-13 Applications

  • Motor control circuits.
  • DC-DC converters for power supplies.
  • Notebook battery power management.
  • Load switch applications.

DMT10H009SPS-13 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the DMT10H009SPS-13?

100V.

What is the FET type of this device?

N-Channel.

What package is the DMT10H009SPS-13 available in?

PowerDI5060-8.

Is the DMT10H009SPS-13 RoHS compliant?

Yes, it is RoHS compliant and also halogen- and antimony-free (Green).

What technology is used in this MOSFET?

MOSFET (Metal Oxide) Enhancement Mode.

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