NVMTS1D5N08H The On Semiconductor NVMTS1D5N08H is an N-Channel MOSFET designed for power applications. It features an 80V drain-to-source voltage and a low Rds(on) of 1.4mOhm.
Mfr Part #:

NVMTS1D5N08H

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NVMTS1D5N08H is an N-Channel MOSFET designed for power applications. It features an 80V drain-to-source voltage and a low Rds(on) of 1.4mOhm.
✓ Total Stock: 1,850 pcs
$ Price Range: $4.68

NVMTS1D5N08H Available from 1 distributor

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✓ Non-Authorised
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1,850 pcs
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NVMTS1D5N08H Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVMTS1D5N08H Description

Short technical summary and product information.

The On Semiconductor NVMTS1D5N08H is a single N-Channel MOSFET designed for power applications. It offers a drain-to-source voltage (Vdss) of 80V and a low on-resistance (Rds On) of 1.4mOhm at a gate-source voltage of 10V and a drain current of 90A. This device can handle a continuous drain current of up to 273A at a case temperature of 25°C and 38A at an ambient temperature of 25°C. The maximum power dissipation is 258W at the case temperature of 25°C and 5.0W at the ambient temperature of 25°C.

 

This MOSFET operates within a temperature range of -55°C to 175°C. It features a small footprint with an 8-DFNW (8.3x8.4) package, suitable for compact designs. The mounting type is surface mount. Key electrical characteristics include a gate threshold voltage of 4V (max) at 490µA and a gate charge of 125nC (max) at 10V. The input capacitance is 8220pF (max) at 40V.

 

The NVMTS1D5N08H is AEC-Q101 qualified and PPAP capable, indicating its suitability for automotive and demanding applications. It is also Pb-Free and RoHS Compliant.

NVMTS1D5N08H Quick Information

Product Type: MOSFET
Series: NVMTS1D5N08H
Canonical Name: NVMTS1D5N08H N-Channel MOSFET
Subcategory: Single

NVMTS1D5N08H Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVMTS1D5N08H Estimated Pricing

Qty Low High
1+ $4.68 $4.68

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMTS1D5N08H Features

  • 80V drain-to-source voltage rating.
  • Low 1.4mOhm Rds On resistance.
  • High 273A continuous drain current.
  • Compact 8-DFNW package.
  • AEC-Q101 Qualified and PPAP Capable.

NVMTS1D5N08H Applications

  • Suitable for compact power designs.
  • Used in automotive applications.
  • Efficient power switching circuits.
  • Minimizes conduction losses.
  • Minimizes driver losses.

NVMTS1D5N08H FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the NVMTS1D5N08H MOSFET?

The drain-to-source voltage (Vdss) for the NVMTS1D5N08H is 80V.

What is the maximum continuous drain current of the NVMTS1D5N08H?

The maximum continuous drain current is 273A at a case temperature of 25°C and 38A at an ambient temperature of 25°C.

What is the Rds On for the NVMTS1D5N08H MOSFET?

The Rds On is a maximum of 1.4mOhm at a drain current of 90A and a gate-source voltage of 10V.

What is the operating temperature range for the NVMTS1D5N08H?

The operating junction and storage temperature range is -55°C to +175°C.

What package type is the NVMTS1D5N08H MOSFET supplied in?

The NVMTS1D5N08H is supplied in an 8-DFNW (8.3x8.4) package and is surface mountable.

Is the NVMTS1D5N08H RoHS compliant?

Yes, the NVMTS1D5N08H is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the NVMTS1D5N08H?

The Moisture Sensitivity Level (MSL) is 1.

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