| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,820 pcs
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1820 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IGOT60R070D1AUMA3 is a 600V N-Channel enhancement-mode power transistor from Infineon Technologies, part of the CoolGaN™ family. This gallium nitride (GaN) FET offers a continuous drain current of 31A (Tc) and a maximum drain-source on-resistance of 70mΩ. It features a typical gate charge of 5.8nC and output charge of 41nC at 400V, with zero reverse recovery charge, enabling high-frequency switching with reduced losses.
Designed for industrial, telecom, and datacenter SMPS applications, particularly in half-bridge topologies such as totem-pole PFC and high-frequency LLC converters. The device is capable of reverse conduction and provides superior commutation ruggedness.
The transistor is housed in a surface-mount PG-DSO-20-87 package (20-PowerSOIC, 11mm width) and operates over a junction temperature range of -55°C to 150°C. It is RoHS compliant and has a moisture sensitivity level of 1 (unlimited).
The maximum drain-source voltage is 600V.
The device is housed in a 20-PowerSOIC (0.433", 11.00mm Width) surface-mount package with supplier package PG-DSO-20-87.
The junction temperature range is -55°C to 150°C.
The component is marked as RoHS3 compliant, but this status is unverified from the source.
The maximum drain-source on-resistance is 70mΩ.