| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,837 pcs
|
1837 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI2333DS-T1-E3 is a P-Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage (Vdss) of 12V and a continuous drain current (Id) of 4.1A at ambient temperature.
Key electrical characteristics include a maximum on-resistance (Rds On) of 32mOhm at 5.3A and 4.5V, a gate charge (Qg) of 18nC at 4.5V, and an input capacitance (Ciss) of 1100pF at 6V. The gate threshold voltage (Vgs(th)) is a maximum of 1V at 250µA, with a maximum gate-source voltage (Vgs) of ±8V.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ). It is housed in a SOT-23-3 (TO-236) surface mount package, offering a power dissipation of 750mW (Ta). The technology employed is MOSFET (Metal Oxide).
Compliance information indicates RoHS3 compliance and MSL 1 Unlimited. REACH status is unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
12V.
4.1A at ambient temperature.
32mOhm maximum at 5.3A drain current and 4.5V gate drive.
SOT-23-3 (also known as TO-236-3 or SC-59).
-55°C to 150°C (junction temperature).
1V maximum at 250µA drain current.
750mW at ambient temperature.