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DMN3016LSS-13 DMN3016LSS-13 is a 30V N-Channel enhancement mode MOSFET from Diodes Incorporated. It features a low on-resistance of 12mOhm at 10V and supports a continuous drain current of 10.3A.
Mfr Part #:

DMN3016LSS-13

Available from 2 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
DMN3016LSS-13 is a 30V N-Channel enhancement mode MOSFET from Diodes Incorporated. It features a low on-resistance of 12mOhm at 10V and supports a continuous drain current of 10.3A.
✓ Total Stock: 1,858 pcs

DMN3016LSS-13 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Husky International Electronic ✓
Non-Authorised Inventory information
1,570 pcs
On Request
1570 pcs On Request 1 On Request On Request N/A On Request On Request
MW.FEP S.p.A. ✓
Non-Authorised Inventory information
288 pcs
On Request
288 pcs On Request 1 On Request On Request On Request On Request On Request
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DMN3016LSS-13 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
Weight
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DMN3016LSS-13 Description

Short technical summary and product information.

The DMN3016LSS-13 is a 30V N-Channel enhancement mode MOSFET designed for high efficiency power management applications. It offers a low on-resistance of 12mOhm at VGS=10V and 16mOhm at VGS=4.5V, enabling efficient switching and reduced conduction losses.

 

This MOSFET supports a continuous drain current of 10.3A at 25°C and 8.3A at 70°C, with a pulsed drain current rating of 80A. It features a low input capacitance of 1415pF and a total gate charge of 25.1nC, contributing to fast switching performance.

 

The device is housed in an 8-SOIC surface mount package with a matte tin finish over a copper leadframe. It is qualified to AEC-Q101 standards for high reliability and is RoHS3 compliant, lead-free, and halogen-free.

DMN3016LSS-13 Quick Information

Product Type: MOSFET
Canonical Name: DMN3016LSS-13 N-Channel Enhancement Mode MOSFET
Subcategory: Single MOSFET

DMN3016LSS-13 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Lead-Free

DMN3016LSS-13 Features

  • Low on-resistance of 12mOhm at 10V.
  • Supports continuous drain current of 10.3A.
  • Qualified to AEC-Q101 high reliability standards.
  • RoHS3 compliant, lead-free, and halogen-free.
  • Surface mount 8-SOIC package for compact designs.

DMN3016LSS-13 Applications

  • Ideal for backlighting power management circuits.
  • Used in DC-DC converter applications.
  • Suitable for general power management functions.
  • Designed for high efficiency switching applications.

DMN3016LSS-13 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the DMN3016LSS-13?

The drain-source voltage (Vdss) is 30V.

What is the maximum continuous drain current at 25°C?

The maximum continuous drain current is 10.3A at TA=25°C with VGS=10V.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 12mOhm at VGS=10V and ID=12A, and 16mOhm at VGS=4.5V and ID=12A.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the DMN3016LSS-13 RoHS compliant?

Yes, it is RoHS3 compliant per EU Directive 2002/95/EC and 2011/65/EU.

What package is the DMN3016LSS-13 available in?

It is available in an 8-SOIC (0.154", 3.90mm Width) surface mount package.

What is the moisture sensitivity level of this device?

The moisture sensitivity level is MSL Level 1 (unlimited) per J-STD-020.

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