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FQP24N08 The FQP24N08 is an N-Channel MOSFET from On Semiconductor with a drain-source voltage of 80V and continuous drain current of 24A. It features a maximum on-resistance of 60mΩ at 10V gate drive.
Mfr Part #:

FQP24N08

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FQP24N08 is an N-Channel MOSFET from On Semiconductor with a drain-source voltage of 80V and continuous drain current of 24A. It features a maximum on-resistance of 60mΩ at 10V gate drive.
✓ Total Stock: 1,825 pcs

FQP24N08 Available from 2 distributors

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Flip Electronics ✓
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1,000 pcs
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1000 pcs On Request 1 On Request On Request On Request On Request On Request
Smaxon Electronics ✓
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825 pcs
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825 pcs On Request 1 On Request On Request 02+ On Request On Request
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FQP24N08 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FQP24N08 Description

Short technical summary and product information.

The FQP24N08 is an N-Channel enhancement-mode MOSFET manufactured by ON Semiconductor, designed for medium-voltage power switching applications. It is housed in a standard TO-220-3 through-hole package, suitable for a wide range of power conversion and load switching circuits.

 

Key electrical specifications include a drain-to-source voltage (Vdss) of 80V, a continuous drain current (Id) of 24A at 25°C case temperature, and a maximum on-resistance (Rds(on)) of 60mΩ at a gate-source voltage of 10V and drain current of 12A. The device has a maximum gate charge (Qg) of 25nC at Vgs = 10V and an input capacitance (Ciss) of 750pF at Vds = 25V, enabling efficient switching performance.

 

The MOSFET operates over a junction temperature range of -55°C to 175°C and has a maximum power dissipation of 75W at 25°C case temperature. The gate threshold voltage (Vgs(th)) is a maximum of 4V at Id = 250µA, and the maximum gate-source voltage rating is ±25V. This component is RoHS3 compliant and REACH unaffected.

FQP24N08 Quick Information

Product Type: MOSFET
Canonical Name: FQP24N08 N-Channel MOSFET
Subcategory: Single MOSFET

FQP24N08 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQP24N08 Features

  • N-Channel MOSFET with 80V drain-source voltage.
  • Continuous drain current rating of 24A at 25°C.
  • Low on-resistance of 60mΩ at 10V gate drive.
  • Through-hole TO-220-3 package for easy mounting.
  • RoHS3 compliant and REACH unaffected.

FQP24N08 Applications

  • Used in DC-DC converter and power supply circuits.
  • Suitable for motor control and load switching.
  • Ideal for battery management and protection systems.
  • Applicable in automotive and industrial power designs.

FQP24N08 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FQP24N08?

The drain-source voltage (Vdss) is 80V.

What is the maximum continuous drain current of the FQP24N08?

The maximum continuous drain current (Id) is 24A at Tc = 25°C.

What is the on-resistance of the FQP24N08?

The maximum on-resistance (Rds(on)) is 60mΩ at Id = 12A and Vgs = 10V.

What package does the FQP24N08 come in?

The FQP24N08 is available in a TO-220-3 through-hole package.

What is the operating temperature range of the FQP24N08?

The operating junction temperature range is -55°C to 175°C.

Is the FQP24N08 RoHS compliant?

Yes, the FQP24N08 is RoHS3 compliant.

What is the gate threshold voltage of the FQP24N08?

The maximum gate threshold voltage (Vgs(th)) is 4V at Id = 250µA.

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