| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,804 pcs
|
1804 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF540 is an N-Channel Power MOSFET manufactured by Vishay Siliconix, part of the third-generation Power MOSFET family. It is designed for fast switching and rugged performance in commercial and industrial applications.
Key electrical specifications include a maximum drain-source voltage (Vdss) of 100V, continuous drain current of 28A at Tc=25°C, and pulsed drain current of 110A. The on-resistance is typically 77mΩ maximum at Vgs=10V and Id=17A. Gate charge is 72nC maximum at Vgs=10V, and input capacitance is 1700pF at Vds=25V. The device is avalanche rated with a single pulse energy of 230mJ.
The IRF540 is packaged in a TO-220-3 (TO-220AB) through-hole package, suitable for up to 150W power dissipation at Tc=25°C. Operating junction temperature range is -55°C to 175°C. The package offers low thermal resistance and ease of mounting.
These characteristics make the IRF540 suitable for switched-mode power supplies, DC-DC converters, motor control circuits, and general-purpose power switching applications. The simple drive requirements and fast switching performance enable efficient power management.
100V maximum.
TO-220-3 (TO-220AB) through-hole package.
-55°C to 175°C junction temperature.
Yes, it is listed as RoHS3 compliant, but this is unverified.
28A at Tc=25°C.
77mΩ maximum at 17A and 10V gate drive.
72nC maximum at 10V gate voltage.