| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,807 pcs
|
1807 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IXYS IXTP80N12T2 is an N-Channel MOSFET with a maximum drain-source voltage (Vdss) of 120V and a continuous drain current of 80A at a case temperature (Tc).
This MOSFET features a low on-resistance of 17mOhm at 40A and 10V Vgs, with a gate charge (Qg) of 80nC at 10V. The gate threshold voltage (Vgs(th)) is a maximum of 4.5V at 100µA. It operates within a temperature range of -55°C to 175°C (TJ).
The component is housed in a TO-220-3 package and utilizes through-hole mounting. Its maximum power dissipation is rated at 325W (Tc).
This MOSFET is suitable for various power switching and control applications where high current and voltage handling are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 120V.
The continuous drain current is 80A at the case temperature (Tc).
The maximum on-resistance (Rds On) is 17mOhm when measured at 40A drain current and 10V gate-source voltage.
The operating temperature range is from -55°C to 175°C (TJ).
The IXTP80N12T2 is available in a TO-220-3 package.
This MOSFET is designed for through-hole mounting.