| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,848 pcs
|
1848 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
HUF75339P3 is an N-Channel MOSFET manufactured by ON Semiconductor. It is characterized for high-current power switching, with a drain-to-source voltage rating of 55 V and a continuous drain current of 75 A at case temperature. Power dissipation is rated at 200 W at Tc.
This device offers a maximum on-resistance of 12 mOhm at Vgs = 10 V and Id = 75 A, helping to reduce conduction losses. The gate charge is 130 nC at Vgs = 20 V, and input capacitance is 2000 pF at Vds = 25 V. The threshold voltage is specified as a maximum of 4 V at Id = 250 µA, with a gate-source voltage range of ±20 V.
The MOSFET is supplied in a TO-220-3 through-hole package, which is suitable for PCB mounting with thermal management via a heatsink. It operates over a junction temperature range of -55°C to +175°C. This component falls within the discrete semiconductor category of single FETs and MOSFETs.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.12 | $3.12 |
| 10+ | $2.01 | $2.01 |
| 100+ | $1.38 | $1.38 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 55 V.
The HUF75339P3 is offered in a TO-220-3 through-hole package.
The MOSFET operates over a junction temperature range of -55°C to +175°C.
The part is listed as RoHS3 Compliant in existing specifications.
Continuous drain current is 75 A at case temperature (Tc).
Maximum on-resistance (Rds(on)) is 12 mOhm at Id = 75 A and Vgs = 10 V.
Power dissipation is rated at 200 W at case temperature (Tc).