| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,790 pcs
|
1790 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Vishay Dale SISS10ADN-T1-GE3 is a single N-Channel MOSFET designed for various power applications. It boasts a 40V drain-source voltage rating and a low on-resistance of 2.65mOhm at a gate-source voltage of 10V and a drain current of 15A. The continuous drain current is rated at 109A at 25°C case temperature and 31.7A at 25°C ambient temperature.
This MOSFET utilizes TrenchFET Gen IV technology, offering reduced power loss and improved efficiency with low Qg and Qoss. It is 100% Rg and UIS tested.
The component is housed in a PowerPAK 1212-8S surface-mount package. It operates within a temperature range of -55°C to 150°C (TJ). Key electrical characteristics include a gate threshold voltage of 2.4V at 250µA, an input capacitance of 3030pF at 20V, and a typical gate charge of 18.5nC at 10V.
Applications include synchronous rectification, synchronous buck converters, high power density DC/DC converters, and load switching.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
40 V.
-55°C to +150°C.
PowerPAK 1212-8S surface mount package.
18.5 nC.
2.65 mOhm.
109 A.
3030 pF at 20 V.