| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,800 pcs
|
1800 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQA16N25C is an N-Channel enhancement mode power MOSFET produced using Fairchild's proprietary planar stripe DMOS technology. This design minimizes on-state resistance, provides superior switching performance, and withstands high energy pulses in avalanche and commutation modes.
Key electrical specifications include a drain-source voltage of 250V, continuous drain current of 17.8A at 25°C (11.3A at 100°C), and a maximum on-resistance of 0.27Ω at VGS=10V. The device features low gate charge (41 nC typical) and low reverse transfer capacitance (68 pF typical) for efficient high-frequency switching. It is 100% avalanche tested with a single pulsed avalanche energy rating of 410 mJ.
The MOSFET is housed in a through-hole TO-3P-3 package (also SC-65-3) and supports a power dissipation of 180W at case temperature 25°C. Operating junction temperature range is -55°C to 150°C. Typical applications include high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterruptible power supplies, and motor control circuits.
250V.
TO-3P-3, SC-65-3 (through hole).
-55°C to 150°C.
RoHS3 Compliant (unverified).
41 nC typical, 53.5 nC maximum at VGS=10V.
0.27Ω at VGS=10V, ID=8.9A.
410 mJ.