| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,800 pcs
|
1800 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STP10N80K5 is a single N-Channel MOSFET from the discrete semiconductor products category. It is designed for high voltage applications with a maximum drain-to-source voltage (Vdss) of 800V and a continuous drain current of 9A (Tc).
Key electrical characteristics include a maximum on-resistance (Rds On) of 600mOhm at 4.5A and 10V gate drive voltage. The input capacitance (Ciss) is 635 pF at 100V, and the gate charge (Qg) is 22 nC at 10V.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 130W (Tc). It is housed in a TO-220-3 package and features through-hole mounting.
The STP10N80K5 utilizes MOSFET (Metal Oxide) technology and is suitable for various power electronics designs requiring high voltage capability and efficient switching.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 800V.
The continuous drain current is 9A.
The maximum on-resistance (Rds On) is 600mOhm at 4.5A and 10V.
The operating temperature range is -55°C to 150°C (TJ).
The STP10N80K5 is supplied in a TO-220-3 package.