IXFN56N90P The IXFN56N90P is a N-Channel MOSFET from IXYS. It offers a 900V drain-source voltage and 56A continuous drain current.
Mfr Part #:

IXFN56N90P

Available from 3 distributors
Mfr Name: IXYS
IXYS
The IXFN56N90P is a N-Channel MOSFET from IXYS. It offers a 900V drain-source voltage and 56A continuous drain current.
Total Stock: 1,676 pcs
$ Price Range: $58.94 - $70.15

IXFN56N90P Available from 3 distributors

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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1,531 pcs
1531 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
134 pcs
134 pcs On Request 1 On Request On Request On Request On Request On Request
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11 pcs
11 pcs On Request 1 On Request On Request On Request On Request On Request

IXFN56N90P Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IXFN56N90P Description

Short technical summary and product information.

The IXFN56N90P is a N-Channel Power MOSFET manufactured by IXYS, designed for high-voltage, high-current switching applications. It features a drain-source voltage rating of 900V and continuous drain current of 56A (at case temperature). The device achieves low on-resistance of 135mΩ (max) at 28A and 10V gate drive, enabling efficient power conversion. With a maximum gate charge of 375nC and input capacitance of 23000pF, the MOSFET is suitable for high-frequency switching topologies. The maximum power dissipation is 1000W (at case temperature), and the operating junction temperature range spans -55°C to 150°C. The part is housed in a chassis-mount SOT-227-4 (miniBLOC) package with supplier device package designation SOT-227B. This robust packaging allows for effective thermal management in industrial and power conversion systems. The drive voltage is specified at 10V for optimal Rds(on) performance, and the maximum gate-source voltage is ±30V.

IXFN56N90P Quick Information

Product Type: Power MOSFET
Canonical Name: MOSFET N-Channel 900V 56A (Tc) SOT-227B
Subcategory: N-Channel MOSFET

IXFN56N90P Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IXFN56N90P Estimated Pricing

Qty Low High
1+ $70.15 $70.15
10+ $58.94 $58.94

Estimated market price range - modelled values for guidance only, not live distributor offers.

IXFN56N90P Features

  • Drain-source voltage rating of 900V maximum.
  • Continuous drain current of 56A at case temperature.
  • Low on-resistance of 135mOhm at 28A and 10V.
  • Chassis mount SOT-227B package for thermal management.
  • RoHS3 compliant (unverified).

IXFN56N90P Applications

  • High-power switching power supplies.
  • DC-DC converters and inverters.
  • Motor drive and control circuits.
  • Uninterruptible power supply (UPS) systems.

IXFN56N90P FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IXFN56N90P?

Maximum drain-source voltage is 900V.

What is the package type of the IXFN56N90P?

SOT-227-4 (miniBLOC) package; supplier device package is SOT-227B.

What is the operating temperature range for the IXFN56N90P?

Operating junction temperature range is -55°C to 150°C.

Is the IXFN56N90P RoHS compliant?

The device is listed as RoHS3 compliant, but this compliance data is unverified.

What is the maximum continuous drain current of the IXFN56N90P?

Maximum continuous drain current is 56A at case temperature.

What is the gate charge of the IXFN56N90P?

Maximum total gate charge is 375 nC at Vgs = 10V.

What is the maximum power dissipation of the IXFN56N90P?

Maximum power dissipation is 1000W at case temperature.

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