| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,609 pcs
|
1609 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Renesas HAT2166H-EL-E is an N-Channel power MOSFET designed for efficient power switching applications. It features a drain-to-source voltage (Vdss) of 30V and a continuous drain current of 45A at Ta. The device offers a low maximum on-resistance of 3.8 mOhm at 22.5A and 10V gate drive, enabling high efficiency in power conversion circuits.
This MOSFET utilizes MOSFET (Metal Oxide) technology and requires a drive voltage of 4.5V or 10V for optimal Rds(on) performance. It has a maximum gate charge of 27 nC at 4.5V and an input capacitance of 4400 pF at 10V Vds. The device can dissipate up to 25W at case temperature and operates at a maximum junction temperature of 150°C.
The HAT2166H-EL-E is supplied in an SC-100 / SOT-669 package with an LFPAK supplier device package, designed for surface mount assembly. This compact package is suitable for space-constrained designs requiring high current handling.
The drain-source voltage (Vdss) is 30V.
The maximum continuous drain current is 45A at Ta.
The maximum drain-source on-resistance is 3.8 mOhm at 22.5A and 10V gate drive.
It comes in an SC-100 / SOT-669 surface mount package with an LFPAK supplier device package.
The maximum operating junction temperature is 150°C.
The maximum gate threshold voltage is 2.5V at 1mA drain current.
The RoHS status is listed as RoHS3 Compliant, but this is unverified and should be confirmed from official sources.