| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,650 pcs
|
1650 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SCTWA40N120G2V-4 is an N-Channel MOSFET manufactured by STMicroelectronics. It features a maximum drain-to-source voltage (Vdss) of 1200V and a continuous drain current of 36A at case temperature (Tc). The device has a maximum on-resistance of 100mOhm at 20A drain current and 18V gate drive.
This MOSFET uses metal oxide technology and is designed for through-hole mounting in a TO-247-4 package. It offers a maximum gate charge of 61nC at 18V and an input capacitance of 1233pF at 800V drain-source voltage. The gate threshold voltage is 4.9V at 1mA drain current.
The device can dissipate up to 277W at case temperature and operates over a junction temperature range of -55°C to 200°C. It is suitable for high-voltage switching applications requiring robust performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 1200V.
The continuous drain current is 36A at case temperature (Tc).
The maximum on-resistance (Rds on) is 100mOhm at 20A drain current and 18V gate drive.
It comes in a TO-247-4 package for through-hole mounting.
The operating junction temperature range is -55°C to 200°C.