| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,630 pcs
|
1630 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SIR826DP-T1-GE3 is a high-performance N-Channel MOSFET designed for demanding applications. It offers a drain-source voltage of 80V and a continuous drain current of up to 60A.
Key electrical characteristics include a low on-resistance (Rds On) of 4.8mOhm at a gate-source voltage of 10V and a drain current of 20A. The gate threshold voltage is 2.8V at 250µA. This MOSFET is suitable for applications requiring efficient switching and power handling.
Packaged in a compact PowerPAK SO-8 surface-mount package, the SIR826DP-T1-GE3 is designed for efficient thermal management. Its operating temperature range is -55°C to +150°C.
This component is well-suited for applications such as fixed telecom, POL, and DC/DC converters, serving as a primary and secondary side switch.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
80V.
PowerPAK SO-8.
-55°C to 150°C (junction).
60A at case temperature 25°C, 25A at ambient 25°C.
4.8mOhm maximum at 20A, 10V.
90nC maximum at 10V, typical 27.9nC.