| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,602 pcs
|
1602 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) |
The 2SK1058-E is an N-Channel power MOSFET from Renesas designed for medium-power switching applications. It features a maximum drain-source voltage of 160V and a continuous drain current rating of 7A. The device utilizes MOSFET (Metal Oxide) technology and offers a maximum power dissipation of 100W.
Key electrical characteristics include an input capacitance of 600pF at 10V drain-source voltage and a maximum gate-source voltage rating of ±15V. The junction temperature is rated up to 150°C, ensuring reliable operation in demanding environments.
The MOSFET is housed in a through-hole TO-3P package (also specified as TO-220-3 Full Pack), which provides robust mechanical mounting and efficient heat dissipation. This package is suitable for power supply, motor control, and inverter circuits where through-hole assembly is preferred.
The maximum drain-source voltage is 160V.
The continuous drain current is 7A (at Ta).
It is available in a TO-220-3 Full Pack / TO-3P through-hole package.
The maximum junction temperature is 150°C.
The maximum power dissipation is 100W (at Tc).
The maximum input capacitance is 600pF at Vds = 10V.
It is listed as RoHS3 Compliant, but this status is unverified.