| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,623 pcs
|
1623 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Infineon IPP220N25NFD is a 250V N-Channel OptiMOS FD power MOSFET designed for high efficiency power conversion applications. Key specifications include a maximum drain-source voltage of 250V, continuous drain current of 61A at 25°C case temperature (44A at 100°C), and a very low typical on-resistance of 22mΩ at 10V gate drive.
This device offers fast diode technology with reduced reverse recovery charge (Qrr) and is optimized for hard commutation ruggedness. The maximum operating junction temperature is 175°C, with 300W power dissipation capability at 25°C. It features 86nC gate charge and 7076pF input capacitance for moderate switching performance.
The IPP220N25NFD is housed in a PG-TO220-3 through-hole package (TO-220-3 compatible) with standard pinout: gate (1), drain (2/tab), source (3). It is qualified according to JEDEC standards, Pb-free, RoHS compliant, and halogen-free per IEC61249-2-21.
The maximum drain-source voltage (Vdss) is 250 V.
The maximum continuous drain current at Tc=25°C is 61 A.
The maximum Rds(on) is 22 mΩ at 61 A drain current and 10 V gate-source voltage.
The package is PG-TO220-3 (TO-220-3) through-hole mounting.
The operating junction temperature range is -55°C to 175°C.
Yes, it is RoHS compliant (Pb-free lead plating).
The maximum gate charge (Qg) at Vgs=10V is 86 nC.