| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,627 pcs
|
1627 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This N-channel MOSFET from On Semiconductor, part number NTD5C446NT4G, is designed for robust performance in power switching applications. It offers a maximum drain-source voltage of 40V and can handle a continuous drain current of up to 110A at the case temperature.
The device exhibits a low on-resistance of 3.5mOhm at 50A and 10V, with a gate charge of 34.3nC. The input capacitance is rated at 2300pF. It operates within a temperature range of -55°C to 175°C.
Packaged in a surface-mount TO-252-3, DPak (2 Leads + Tab), SC-63 package, this MOSFET is suitable for designs requiring efficient power management. The technology utilized is MOSFET (Metal Oxide) with an enhancement channel mode.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 40V.
The continuous drain current is 110A.
The maximum on-resistance is 3.5mOhm at 50A and 10V.
The operating temperature range is -55°C to 175°C.
It is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.
This MOSFET is designed for surface mounting.