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BSC220N20NSFDATMA1 N-Channel MOSFET, 200V drain-source voltage, 52A continuous drain current, 22mΩ on-resistance, in a TSON-8 surface mount package.
Mfr Part #:

BSC220N20NSFDATMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET, 200V drain-source voltage, 52A continuous drain current, 22mΩ on-resistance, in a TSON-8 surface mount package.
✓ Total Stock: 1,669 pcs
$ Price Range: $5.66

BSC220N20NSFDATMA1 Available from 1 distributor

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✓ Non-Authorised
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Xingangxin ✓
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1,669 pcs
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1669 pcs On Request 1 On Request On Request On Request On Request On Request
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BSC220N20NSFDATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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BSC220N20NSFDATMA1 Description

Short technical summary and product information.

The BSC220N20NSFDATMA1 is an N-channel power MOSFET from Infineon Technologies, part of the OptiMOS 3 family. It features a maximum drain-source voltage of 200V and a continuous drain current of 52A at 25°C (41A at 100°C). The device offers a low maximum on-resistance of 22mΩ at Vgs=10V, with a gate charge of 43nC and input capacitance of 3680pF at Vds=100V.

 

This MOSFET is designed for high-frequency switching applications and synchronous rectification, providing excellent figure of merit (FOM) for efficiency. It is rated for industrial applications per JEDEC standards and supports a junction temperature range of -55°C to 175°C.

 

The device is housed in an 8-PowerTDFN surface mount package (PG-TSON-8-3) with Pb-free lead plating. It is RoHS compliant and halogen-free according to IEC61249-2-21. The single-pulse avalanche energy is rated at 214mJ, and the reverse diode peak dv/dt is 60kV/µs.

BSC220N20NSFDATMA1 Quick Information

Product Type: N-Channel MOSFET
Series: OptiMOS 3
Canonical Name: BSC220N20NSFDATMA1 N-Channel MOSFET, 200V, 52A, TSON-8
Subcategory: Power MOSFET

BSC220N20NSFDATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): MSL 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BSC220N20NSFDATMA1 Estimated Pricing

Qty Low High
1+ $5.66 $5.66

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSC220N20NSFDATMA1 Features

  • 200V maximum drain-source voltage.
  • 52A continuous drain current at 25°C.
  • 22mΩ maximum on-resistance at 10V gate drive.
  • OptiMOS 3 technology for high efficiency.
  • Pb-free, RoHS, and halogen-free compliant.

BSC220N20NSFDATMA1 Applications

  • Suitable for high-frequency switching power supplies.
  • Ideal for synchronous rectification circuits.
  • Used in DC-DC converters and inverters.
  • Designed for industrial applications per JEDEC standards.

BSC220N20NSFDATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of BSC220N20NSFDATMA1?

200V maximum.

What is the continuous drain current rating?

52A at Tc=25°C, 41A at Tc=100°C.

What is the on-resistance (Rds(on))?

22mΩ maximum at Vgs=10V, Id=52A.

What is the operating temperature range?

-55°C to 175°C.

Is this device RoHS compliant?

Yes, RoHS compliant and Pb-free.

What package is this MOSFET available in?

8-PowerTDFN (PG-TSON-8-3) surface mount package.

What is the gate charge?

43nC maximum at Vgs=10V.

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