| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,620 pcs
|
1620 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STW26N65DM2 is an N-Channel power MOSFET from STMicroelectronics designed for high-voltage switching applications. It features a maximum drain-to-source voltage of 650V and a continuous drain current rating of 20A at case temperature (Tc). The device can dissipate up to 170W of power.
Key electrical characteristics include a maximum on-resistance of 190mOhm at 10A gate drive of 10V, a typical gate charge of 35.5nC at 10V, and an input capacitance of 1480pF at 100V drain-source. The gate threshold voltage is 5V maximum at 250µA drain current, and the maximum gate-source voltage is ±25V.
The device is built with MOSFET (Metal Oxide) technology and operates over a junction temperature range of -55°C to 150°C. It is supplied in a TO-247-3 through-hole package, suitable for power circuit board mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 650V.
The maximum continuous drain current is 20A at case temperature (Tc).
The operating junction temperature range is -55°C to 150°C.
It comes in a TO-247-3 through-hole package.
The maximum on-resistance is 190mOhm at 10A drain current and 10V gate-source voltage.
The maximum gate charge is 35.5nC at 10V gate-source voltage.
The maximum input capacitance is 1480pF at 100V drain-source voltage.