| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,646 pcs
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1646 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRF7759L2TRPBF is an N-Channel power MOSFET from Infineon Technologies, part of the HEXFET family. It is designed for high-performance isolated converter primary switches and synchronous rectification.
Key electrical specifications include a drain-to-source voltage of 75V, continuous drain current of 26A at 25°C ambient (375A package-limited at case temperature 25°C), and a maximum on-resistance of 2.3mΩ at 10V gate drive. Gate charge total is 300nC maximum (200nC typical), input capacitance is 12222pF, and avalanche energy is 257mJ.
The device is housed in a surface-mount DirectFET Isometric L8 package with a low profile of 0.7mm, compatible with dual-sided cooling. Operating junction temperature ranges from -55°C to 175°C, and power dissipation is 125W at case temperature 25°C.
Applications include high-frequency switching, synchronous rectification, and isolated DC-DC converters. The part is RoHS compliant, halogen-free, and lead-free.
75V.
DirectFET Isometric L8 surface-mount package.
-55°C to 175°C (junction).
Yes, it is RoHS compliant and halogen-free.
26A at 25°C ambient, 375A package-limited at 25°C case.
Maximum 2.3mΩ at 10V gate drive, typical 1.8mΩ.