| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,577 pcs
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1577 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRLR2908TRLPBF is an N-Channel power MOSFET from Infineon Technologies, part of the HEXFET family. It is rated for an 80V drain-source breakdown voltage and a continuous drain current of 30A at 25°C case temperature. The device features a maximum on-resistance of 28mΩ at 23A and 10V gate drive, with a typical value of 22.5mΩ. It supports a gate drive voltage of 4.5V or 10V, and has a gate threshold voltage range of 1.0V to 2.5V.
The MOSFET offers a maximum power dissipation of 120W at 25°C case temperature and operates over a junction temperature range of -55°C to 175°C. It has a typical gate charge of 22nC at 4.5V and an input capacitance of 1890pF at 25V. The datasheet highlights advanced process technology, ultra low on-resistance, dynamic dv/dt rating, fast switching, and repetitive avalanche capability up to Tjmax.
This device is provided in a TO-252-3 (DPak) surface-mount package, also known as D-Pak. It is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The datasheet lists the part as lead-free. An alternate through-hole version, IRLU2908PbF, is also available in an I-Pak package.
80V.
30A.
22.5mΩ typical, 28mΩ maximum at Id=23A, Vgs=10V.
4.5V or 10V.
-55°C to 175°C (junction).
TO-252-3 (DPak) surface mount.
The datasheet lists the part as lead-free. RoHS3 compliance is reported but unverified.