| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,600 pcs
|
1600 pcs | On Request | 1 | On Request | On Request | 06+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDB8876 is an N-Channel MOSFET manufactured by On Semiconductor, designed for high-efficiency power switching applications. It features a drain-to-source voltage (Vdss) of 30V and a continuous drain current of 71A at 25°C case temperature, making it suitable for moderate-power circuits.
The device has a maximum on-resistance of 8.5mOhm at 40A and 10V gate drive, which helps minimize conduction losses. It supports gate drive voltages of 4.5V and 10V, with a maximum gate-source voltage of ±20V. The gate charge is 45nC at 10V, and the input capacitance is 1700pF at 15V, indicating moderate switching speeds.
The FDB8876 is housed in a TO-263-3 (D2PAK) surface-mount package, which provides good thermal performance and is suitable for automated assembly. It can dissipate up to 70W at case temperature and operates over a junction temperature range of -55°C to 175°C, making it suitable for demanding environments.
The maximum drain-to-source voltage (Vdss) is 30V.
The continuous drain current is 71A at 25°C case temperature.
The maximum on-resistance is 8.5mOhm at 40A drain current and 10V gate-source voltage.
The operating junction temperature range is -55°C to 175°C.
The FDB8876 is available in a TO-263-3 (D2PAK) surface-mount package.
The FDB8876 is marked as RoHS3 compliant, but this status is unverified.