| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,600 pcs
|
1600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FCP850N80Z is an N-Channel enhancement-mode MOSFET manufactured by ON Semiconductor. It is designed for high-voltage switching applications requiring efficient power management.
Key electrical specifications include a drain-to-source voltage (Vdss) of 800V, continuous drain current of 8A at case temperature, and a maximum on-resistance of 850mOhm at 3A drain current and 10V gate drive. The device features a maximum gate charge of 29nC at 10V and input capacitance of 1315pF at 100V drain-source voltage.
The MOSFET is housed in a standard TO-220-3 through-hole package, suitable for PCB mounting with adequate heat sinking. It operates over a junction temperature range of -55°C to 150°C and can dissipate up to 136W at case temperature. The maximum gate-source voltage is ±20V, with a typical threshold voltage of 4.5V at 600µA drain current.
The drain-source voltage (Vdss) is 800V.
The maximum continuous drain current is 8A at case temperature (Tc).
The maximum on-resistance (Rds(on)) is 850mOhm at 3A drain current and 10V gate drive.
It is available in a TO-220-3 through-hole package.
The junction temperature range is -55°C to 150°C.
The maximum gate charge (Qg) is 29nC at 10V gate-source voltage.
The maximum input capacitance (Ciss) is 1315pF at 100V drain-source voltage.