| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,577 pcs
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1577 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This P-Channel MOSFET, part number PCP1302-TD-H from ON Semiconductor, is designed for various electronic applications. It features a maximum drain-to-source voltage (Vdss) of 60V and can handle a continuous current of 3A at ambient temperature. The on-resistance (Rds On) is specified as a maximum of 266mOhm at 1.5A and 10V gate-source voltage.
The device operates at temperatures up to 150°C (TJ) and has a gate charge (Qg) of 6.4 nC at 10V. Input capacitance (Ciss) is 262 pF at 20V. The gate threshold voltage (Vgs(th)) is a maximum of 2.6V at 1mA, and the maximum gate-source voltage (Vgs) is ±20V.
Packaged in a TO-243AA (SOT-89/PCP-1) surface mount configuration, this MOSFET is suitable for designs requiring compact components. Its power dissipation is rated at a maximum of 3.5W (Tc).
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) for the PCP1302-TD-H is 60V.
The PCP1302-TD-H MOSFET has a continuous current rating of 3A at ambient temperature.
The maximum on-resistance (Rds On) for the PCP1302-TD-H is 266mOhm when measured at 1.5A and 10V gate-source voltage.
The PCP1302-TD-H MOSFET is in a TO-243AA package, also known as SOT-89/PCP-1.
The operating temperature for the PCP1302-TD-H is up to 150°C (TJ).