| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,600 pcs
|
1600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDB9403L-F085 is a single N-Channel power MOSFET from onsemi designed for high-efficiency power switching applications. It features a maximum drain-source voltage of 40V and a continuous drain current rating of 110A at case temperature. The device exhibits a typical low on-resistance of 1.2mΩ maximum when driven at 10V gate-source voltage with 80A drain current.
This MOSFET operates over a wide junction temperature range of -55°C to +175°C and can dissipate up to 333W of power. Key switching characteristics include a maximum input capacitance of 13500pF at 20V drain-source bias and a maximum total gate charge of 245nC at 10V gate bias, supporting efficient gate drive design.
The part is supplied in the surface-mount D2PAK (TO-263) package with a TO-263-3 mechanical outline, suitable for automated assembly processes. The MSL rating is 1 (unlimited floor life).
The maximum drain-source voltage is 40 V.
The drain current is rated 110 A nominal at case temperature.
The maximum on-resistance is 1.2 mΩ at 80 A drain current and 10 V gate-source voltage.
It is offered in a D2PAK (TO-263) surface-mount package, also specified as TO-263-3 or D²Pak (2 Leads + Tab), TO-263AB.
The operating junction temperature range is -55°C to +175°C.
The maximum power dissipation is 333 W at the junction temperature.
The maximum input capacitance is 13500 pF at 20 V drain-source voltage.