| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
598 pcs
|
598 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STP35N60DM2 is a high voltage N-channel Power MOSFET from STMicroelectronics, part of the MDmesh™ DM2 fast recovery diode series. It is designed for demanding high efficiency converters and is suitable for bridge topologies and ZVS phase-shift converters.
Key electrical specifications include a 600V drain-source breakdown voltage (VDS) and a maximum continuous drain current (ID) of 28A at 25°C case temperature. The on-resistance (RDS(on)) is a maximum of 110mOhm at 14A and 10V gate-source voltage. It also features a fast-recovery body diode and extremely low gate charge.
This MOSFET is housed in a TO-220 package with through-hole mounting. It has a maximum power dissipation of 210W at 25°C case temperature and an operating junction temperature range of -55°C to 150°C. The device is 100% avalanche tested and offers extremely high dv/dt ruggedness.
Applications include general switching applications where high efficiency and ruggedness are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 600V minimum.
The continuous drain current is 28A at 25°C case temperature and 17A at 100°C.
The maximum on-resistance is 110mΩ at 14A drain current and 10V gate-source voltage.
The operating junction temperature range is -55°C to 150°C.
The device is packaged in a TO-220-3 through-hole package.
The maximum gate threshold voltage is 5V at 250µA drain current.
The single pulse avalanche energy is 650mJ at 25°C starting junction temperature.