| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,600 pcs
|
1600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This N-Channel MOSFET from Renesas Electronics Corporation, part number NP82N04PDG-E1-AY, is designed for power switching applications. It offers a drain-source voltage (Vdss) of 40V and can handle a continuous drain current (Id) of 82A at 25°C.
The MOSFET exhibits a low on-resistance (Rds On) of 3.5mOhm at 41A and 10V gate-source voltage, contributing to efficient power transfer. The gate threshold voltage (Vgs(th)) is 2.5V at 250µA, and the maximum gate-source voltage is ±20V.
Packaged in a TO-263 surface mount configuration, this component is suitable for various electronic designs. It has a maximum power dissipation of 1.8W (Ta) and 143W (Tc) and an operating temperature range up to 175°C (TJ).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is 40V.
The continuous drain current (Id) is 82A at 25°C.
The Rds On is a maximum of 3.5mOhm at 41A drain current and 10V gate-source voltage.
The gate threshold voltage (Vgs(th)) is a maximum of 2.5V at 250µA.
It is supplied in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package.
The mounting type is Surface Mount.
The maximum operating junction temperature (TJ) is 175°C.