| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,600 pcs
|
1600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay SIA446DJ-T1-GE3 is an N-Channel MOSFET featuring Vishay's ThunderFET® technology, optimizing RDS(on), Qg, Qsw, and Qoss. It offers a drain-source voltage (Vds) of 150V and a continuous drain current (Id) of up to 7.7A at 25°C case temperature.
Key electrical characteristics include a maximum Rds(on) of 177mOhm at 10V Vgs and 3A Id, and a gate charge (Qg) of 4.3nC typical at 10V Vgs. The MOSFET operates over a junction temperature range of -55°C to 150°C.
This device is housed in a PowerPAK® SC-70-6 package, designed for surface mounting. Its applications include DC/DC converters, boost converters, synchronous rectification, power management, and LED backlighting.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage is 150 V.
The maximum continuous drain current is 7.7 A at 25°C case temperature.
The Rds(on) is 177mOhm at Vgs = 10V.
The operating junction and storage temperature range is -55°C to 150°C.
The device is supplied in a PowerPAK® SC-70-6 package.
Yes, the RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.