NTBG028N170M1 The On Semiconductor NTBG028N170M1 is a SiC MOSFET with a 1700V drain-to-source voltage and 40mOhm maximum on-resistance. It is designed for surface mount applications in a D2PAK-7 package.
Mfr Part #:

NTBG028N170M1

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NTBG028N170M1 is a SiC MOSFET with a 1700V drain-to-source voltage and 40mOhm maximum on-resistance. It is designed for surface mount applications in a D2PAK-7 package.
✓ Total Stock: 1,600 pcs
$ Price Range: $0.99

NTBG028N170M1 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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1,600 pcs
1600 pcs On Request 1 On Request On Request On Request On Request On Request

NTBG028N170M1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTBG028N170M1 Description

Short technical summary and product information.

The On Semiconductor NTBG028N170M1 is a Silicon Carbide (SiC) MOSFET designed for high-performance power applications. It features a maximum drain-to-source voltage (Vds) of 1700V and a low on-resistance (Rds On) of 40mOhm at 60A and 20V gate-source voltage.

 

This N-channel MOSFET offers a continuous drain current of 71A at 25°C case temperature and a maximum power dissipation of 428W. Key electrical characteristics include an input capacitance (Ciss) of 4160 pF at 800V and a gate charge (Qg) of 222 nC at 20V.

 

The device operates within a junction temperature range of -55°C to 175°C. It is housed in a TO-263-8, D²Pak (7 Leads + Tab), TO-263CA package, suitable for surface mounting.

 

Typical applications for the NTBG028N170M1 include Uninterruptible Power Supplies (UPS), DC-DC converters, and boost converters, leveraging its SiC technology for enhanced efficiency and power handling.

NTBG028N170M1 Quick Information

Product Type: MOSFET
Series: NTBG028N170M1
Canonical Name: NTBG028N170M1 SiC MOSFET
Subcategory: SiC MOSFET

NTBG028N170M1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTBG028N170M1 Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTBG028N170M1 Features

  • 1700V drain-to-source voltage rating.
  • Low 40mOhm maximum on-resistance.
  • 71A continuous drain current capability.
  • SiC technology for high efficiency.
  • D2PAK-7 surface mount package.

NTBG028N170M1 Applications

  • Suitable for UPS systems.
  • Used in DC-DC converters.
  • Ideal for boost converter designs.
  • High-voltage power applications.

NTBG028N170M1 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NTBG028N170M1?

The maximum drain-to-source voltage (Vds) for the NTBG028N170M1 is 1700 V.

What is the maximum on-resistance of the NTBG028N170M1 MOSFET?

The maximum on-resistance (Rds On) for the NTBG028N170M1 is 40 mOhm when tested at 60A drain current and 20V gate-source voltage.

What is the continuous drain current rating for the NTBG028N170M1?

The continuous drain current (Id) for the NTBG028N170M1 is rated at 71A at a case temperature of 25°C.

What is the operating temperature range for the NTBG028N170M1?

The NTBG028N170M1 can operate within a junction temperature range of -55°C to 175°C.

What type of package is the NTBG028N170M1 MOSFET supplied in?

The NTBG028N170M1 is supplied in a TO-263-8, D²Pak (7 Leads + Tab), TO-263CA package, suitable for surface mounting.

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