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FCP260N65S3 N-Channel Power MOSFET from onsemi's SUPERFET III Easy Drive series. Rated for 650V drain-source voltage and 12A continuous drain current with 260mΩ maximum on-resistance.
Mfr Part #:

FCP260N65S3

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel Power MOSFET from onsemi's SUPERFET III Easy Drive series. Rated for 650V drain-source voltage and 12A continuous drain current with 260mΩ maximum on-resistance.
✓ Total Stock: 1,600 pcs
$ Price Range: $1.31

FCP260N65S3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Flip Electronics ✓
Non-Authorised Inventory information
1,600 pcs
On Request
1600 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

FCP260N65S3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FCP260N65S3 Description

Short technical summary and product information.

The FCP260N65S3 is an N-Channel Power MOSFET from onsemi's SUPERFET III Easy Drive series, utilizing charge balance technology for low on-resistance and low gate charge. It features a 650V drain-source voltage rating, 12A continuous drain current (at Tc=25°C), and a maximum on-resistance of 260mΩ at 10V gate drive. Typical on-resistance is 222mΩ. The device offers ultra-low gate charge (24nC typical) and low effective output capacitance (248pF typical), enabling efficient high-frequency switching. It is 100% avalanche tested with a single pulse avalanche energy rating of 57mJ.

 

This MOSFET is designed for power supply applications including computing/display, telecom/server, and industrial power supplies, as well as lighting, chargers, and adapters. It is housed in a through-hole TO-220-3 package and is Pb-Free and RoHS compliant.

FCP260N65S3 Quick Information

Product Type: Power MOSFET
Series: Easy Drive
Canonical Name: FCP260N65S3 N-Channel MOSFET, 650V, 12A, TO-220-3
Subcategory: N-Channel Power MOSFET

FCP260N65S3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FCP260N65S3 Estimated Pricing

Qty Low High
800+ $1.31 $1.31

Estimated market price range - modelled values for guidance only, not live distributor offers.

FCP260N65S3 Features

  • 650V drain-source voltage rating.
  • 12A continuous drain current capability.
  • 260mΩ maximum on-resistance at 10V.
  • Low gate charge of 24nC typical.
  • 100% avalanche tested for reliability.

FCP260N65S3 Applications

  • Computing and display power supplies.
  • Telecom and server power supplies.
  • Industrial power supply applications.
  • Lighting, charger, and adapter designs.

FCP260N65S3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

650V maximum.

What is the continuous drain current?

12A at Tc=25°C, 7.6A at Tc=100°C.

What is the on-resistance?

260mΩ maximum at 6A, 10V; typical 222mΩ.

What is the gate charge?

24nC typical at 10V.

What is the operating temperature range?

-55°C to 150°C junction temperature.

What package is it available in?

TO-220-3 through-hole.

Is it RoHS compliant?

Yes, RoHS3 compliant and Pb-Free.

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