| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,600 pcs
|
1600 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRL530STRRPBF is an N-Channel Power MOSFET from Vishay Siliconix, designed for high-efficiency power management applications. It features a drain-source voltage (Vdss) of 100V and a continuous drain current of 15A at Tc=25°C, with a maximum pulsed drain current of 60A. The device offers a low on-resistance of 160mOhm at Vgs=5V and Id=9A, and is specified for logic-level gate drive with a threshold voltage of 2V at Id=250µA.
The MOSFET has a total gate charge of 28nC at Vgs=5V, with Qgs of 3.8nC and Qgd of 14nC. Input capacitance is 930pF at Vds=25V. It is rated for repetitive avalanche energy of 8.8mJ and single pulse avalanche energy of 290mJ. The device can operate over a junction temperature range of -55°C to 175°C, with a maximum power dissipation of 88W at Tc=25°C and 3.7W at Ta=25°C.
The IRL530STRRPBF is housed in a surface-mount D2PAK (TO-263) package, suitable for high current applications. It is available in tape and reel packaging. The part is RoHS3 compliant (unverified) and has an MSL of 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 800+ | $0.93 | $0.93 |
| 1,600+ | $0.86 | $0.86 |
| 2,400+ | $0.83 | $0.83 |
| 4,000+ | $0.81 | $0.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is 100V.
It is available in a surface-mount D2PAK (TO-263) package.
The operating junction temperature range is -55°C to 175°C.
The part is listed as RoHS3 compliant, but this is unverified.
The maximum gate threshold voltage is 2V at Id=250µA.
The maximum on-resistance is 160mOhm at Id=9A and Vgs=5V.
The maximum total gate charge is 28nC at Vgs=5V.