| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,600 pcs
|
1600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FCPF7N60YDTU is an N-Channel MOSFET from On Semiconductor's SUPERFET family. It features a drain-source voltage of 600V and a continuous drain current of 7A at 25°C case temperature. The device is built with MOSFET (Metal Oxide) technology and is designed for high-voltage switching applications.
Key electrical characteristics include a pulsed drain current rating of 21A and a maximum gate-source voltage of ±30V. The device is RoHS compliant and lead-free.
The FCPF7N60YDTU is housed in a TO-220F-3 (TO-220 Fullpack) package, suitable for through-hole mounting. This package provides isolation between the mounting tab and the die, simplifying heatsink attachment.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
| 10+ | $0.70 | $0.70 |
| 100+ | $0.56 | $0.56 |
| 800+ | $0.39 | $0.39 |
| 1,600+ | $0.36 | $0.36 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 600V.
The continuous drain current is 7A at Tc=25°C and 4.4A at Tc=100°C.
The pulsed drain current is 21A.
It uses MOSFET (Metal Oxide) technology.
Yes, the device is Pb-Free and RoHS compliant.