IXTP02N120P The IXYS IXTP02N120P is an N-Channel MOSFET designed for high voltage applications. It features a 1200V drain-source voltage and 200mA continuous drain current.
Mfr Part #:

IXTP02N120P

Available from 1 distributors
Mfr Name: IXYS
IXYS
The IXYS IXTP02N120P is an N-Channel MOSFET designed for high voltage applications. It features a 1200V drain-source voltage and 200mA continuous drain current.
Total Stock: 1,595 pcs
$ Price Range: $0.99

IXTP02N120P Available from 1 distributor

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IXTP02N120P Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IXTP02N120P Description

Short technical summary and product information.

The IXYS IXTP02N120P is an N-Channel Power MOSFET with a 1200V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 200mA at 25°C. It offers a low on-resistance of 75 Ohms maximum at 100mA and 10V gate-source voltage, with a gate threshold voltage (Vgs(th)) of 4V maximum at 100µA.

 

This MOSFET is avalanche rated and features fast intrinsic rectification, making it suitable for demanding applications. It operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 33W at 25°C.

 

The device is housed in a standard TO-220-3 package and is designed for through-hole mounting. Its key electrical characteristics include a maximum gate-source voltage of ±20V and an input capacitance (Ciss) of 104pF at 25V.

 

Applications for the IXTP02N120P include DC-DC converters, switch-mode power supplies, and motor control systems where high voltage blocking and efficient switching are required.

IXTP02N120P Quick Information

Product Type: MOSFET
Series: Polar
Canonical Name: IXYS IXTP02N120P N-Channel MOSFET
Subcategory: Single

IXTP02N120P Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IXTP02N120P Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

IXTP02N120P Features

  • N-Channel MOSFET with 1200V drain-source voltage.
  • Continuous drain current of 200mA at 25°C.
  • Maximum on-resistance is 75 Ohms.
  • Gate threshold voltage is 4V maximum.
  • Packaged in TO-220-3 for through-hole mounting.

IXTP02N120P Applications

  • Suitable for DC-DC converters.
  • Used in switch-mode power supplies.
  • Applicable for AC and DC motor drives.
  • Can be used for laser drivers and igniters.

IXTP02N120P FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage (Vdss) for the IXTP02N120P?

The maximum drain-to-source voltage (Vdss) is 1200V.

What is the continuous drain current at 25°C?

The continuous drain current is 200mA at 25°C.

What is the maximum on-resistance (Rds On) for this MOSFET?

The maximum on-resistance is 75 Ohms at 100mA and 10V gate-source voltage.

What is the gate threshold voltage (Vgs(th))?

The maximum gate threshold voltage is 4V at 100µA.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the IXTP02N120P available in?

The IXTP02N120P is available in a TO-220-3 package.

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