NVBG060N065SC1 The On Semiconductor NVBG060N065SC1 is a Silicon Carbide (SiC) N-Channel MOSFET designed for high-performance applications. It offers a 650V drain-to-source voltage and low on-resistance.
Mfr Part #:

NVBG060N065SC1

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NVBG060N065SC1 is a Silicon Carbide (SiC) N-Channel MOSFET designed for high-performance applications. It offers a 650V drain-to-source voltage and low on-resistance.
✓ Total Stock: 1,600 pcs
$ Price Range: $0.99

NVBG060N065SC1 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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1,600 pcs
1600 pcs On Request 1 On Request On Request On Request On Request On Request

NVBG060N065SC1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id

NVBG060N065SC1 Description

Short technical summary and product information.

The NVBG060N065SC1 from On Semiconductor is a Silicon Carbide (SiC) N-Channel MOSFET. It features a maximum drain-to-source voltage (VDSS) of 650V and a low typical on-resistance (RDS(on)) of 44 mOhm at 18V gate-source voltage. The device boasts an ultra-low gate charge (QG(tot)) of 74 nC and low output capacitance (Coss) of 133 pF.

 

This MOSFET is designed for demanding applications, with a continuous drain current of 46A at 25°C and a maximum power dissipation of 170W. It operates across a wide temperature range from -55°C to +175°C.

 

The NVBG060N065SC1 is AEC-Q101 Qualified and PPAP Capable, making it suitable for automotive applications such as on-board chargers and DC/DC converters for EVs and HEVs. It is supplied in a surface-mount D2PAK-7L package.

NVBG060N065SC1 Quick Information

Product Type: MOSFET
Series: NVBG060N065SC1
Canonical Name: NVBG060N065SC1 Silicon Carbide (SiC) N-Channel MOSFET
Subcategory: N-Channel

NVBG060N065SC1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVBG060N065SC1 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVBG060N065SC1 Features

  • 650V Drain-to-Source Voltage rating.
  • Low 44 mOhm typical RDS(on).
  • Ultra-low 74 nC total gate charge.
  • AEC-Q101 Qualified for automotive use.
  • Surface mount D2PAK-7L package.

NVBG060N065SC1 Applications

  • High-voltage power switching applications
  • Use in industrial motor drives
  • Suitable for solar inverter circuits
  • High-efficiency power supplies

NVBG060N065SC1 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NVBG060N065SC1?

The maximum drain-to-source voltage (VDSS) is 650 V.

What is the typical on-resistance of the NVBG060N065SC1?

The typical on-resistance is 44 mOhm at a gate-source voltage of 18 V.

What is the gate charge for the NVBG060N065SC1?

The typical total gate charge (QG(tot)) is 74 nC at a gate-source voltage of 18 V.

What package type is the NVBG060N065SC1 supplied in?

The NVBG060N065SC1 is supplied in a D2PAK-7L package.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to +175°C.

Is the NVBG060N065SC1 AEC-Q101 qualified?

Yes, the NVBG060N065SC1 is AEC-Q101 Qualified and PPAP Capable.

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