FDFS6N548 The FDFS6N548 is an integrated N-Channel PowerTrench MOSFET and Schottky diode from On Semiconductor, rated for 30V drain-source voltage and 7A continuous drain current, in an SOIC-8 package.
Mfr Part #:

FDFS6N548

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FDFS6N548 is an integrated N-Channel PowerTrench MOSFET and Schottky diode from On Semiconductor, rated for 30V drain-source voltage and 7A continuous drain current, in an SOIC-8 package.
✓ Total Stock: 1,585 pcs
$ Price Range: $0.68

FDFS6N548 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,585 pcs
1585 pcs On Request 1 On Request On Request On Request On Request On Request

FDFS6N548 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id

FDFS6N548 Description

Short technical summary and product information.

The FDFS6N548 from On Semiconductor combines a PowerTrench N-Channel MOSFET with a low forward voltage Schottky barrier rectifier in a single SO-8 package. This device is designed for DC/DC converter applications, offering fast switching and low gate charge. The MOSFET features a maximum on-resistance of 23 mOhm at VGS=10V and ID=7A, and 30 mOhm at VGS=4.5V and ID=6A. The integrated Schottky diode has a maximum forward voltage of 0.45V at 2A and 0.28V at 100mA, with a repetitive peak reverse voltage of 30V and average forward current of 2A. The device is surface mount in an 8-SOIC package with gull wing leads. It operates over a junction temperature range of -55°C to +150°C and has a maximum power dissipation of 1.6W (single operation, Note 1a). The MOSFET also features a drain-source avalanche energy rating of 12 mJ.

FDFS6N548 Quick Information

Product Type: MOSFET with Integrated Schottky Diode
Canonical Name: FDFS6N548 Integrated N-Channel PowerTrench MOSFET and Schottky Diode
Subcategory: Power MOSFET with Integrated Schottky Diode

FDFS6N548 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDFS6N548 Estimated Pricing

Qty Low High
1,585+ $0.68 $0.68

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDFS6N548 Features

  • N-Channel PowerTrench MOSFET with integrated Schottky diode.
  • Maximum drain-source voltage rating of 30V.
  • Continuous drain current rating of 7A.
  • Low on-resistance of 23 mOhm at 10V.
  • Surface mount SOIC-8 package for compact designs.

FDFS6N548 Applications

  • Ideal for DC/DC converter circuits.
  • Used in power management for portable devices.
  • Suitable for load switch applications.
  • Applicable in battery charging circuits.

FDFS6N548 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FDFS6N548?

The maximum drain-source voltage (VDS) is 30V.

What is the continuous drain current rating?

The continuous drain current (ID) is 7A (Note 1a).

What is the on-resistance at VGS=10V?

The maximum on-resistance is 23 mOhm at VGS=10V and ID=7A.

What package is the FDFS6N548 available in?

The device is available in an 8-SOIC (0.154", 3.90mm Width) surface mount package.

What is the operating temperature range?

The operating junction temperature range is -55°C to +150°C.

Does the FDFS6N548 have an integrated Schottky diode?

Yes, it integrates a Schottky diode with a maximum forward voltage of 0.45V at 2A and 0.28V at 100mA.

What is the maximum power dissipation?

The maximum power dissipation for single operation is 1.6W (Note 1a).

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