| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,585 pcs
|
1585 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Feature | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Termination Style | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDFS6N548 from On Semiconductor combines a PowerTrench N-Channel MOSFET with a low forward voltage Schottky barrier rectifier in a single SO-8 package. This device is designed for DC/DC converter applications, offering fast switching and low gate charge. The MOSFET features a maximum on-resistance of 23 mOhm at VGS=10V and ID=7A, and 30 mOhm at VGS=4.5V and ID=6A. The integrated Schottky diode has a maximum forward voltage of 0.45V at 2A and 0.28V at 100mA, with a repetitive peak reverse voltage of 30V and average forward current of 2A. The device is surface mount in an 8-SOIC package with gull wing leads. It operates over a junction temperature range of -55°C to +150°C and has a maximum power dissipation of 1.6W (single operation, Note 1a). The MOSFET also features a drain-source avalanche energy rating of 12 mJ.
| Qty | Low | High |
|---|---|---|
| 1,585+ | $0.68 | $0.68 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) is 30V.
The continuous drain current (ID) is 7A (Note 1a).
The maximum on-resistance is 23 mOhm at VGS=10V and ID=7A.
The device is available in an 8-SOIC (0.154", 3.90mm Width) surface mount package.
The operating junction temperature range is -55°C to +150°C.
Yes, it integrates a Schottky diode with a maximum forward voltage of 0.45V at 2A and 0.28V at 100mA.
The maximum power dissipation for single operation is 1.6W (Note 1a).