| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,600 pcs
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1600 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request |
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The IRF3205STRRPBF is an N-channel power MOSFET from Infineon Technologies, part of the advanced HEXFET family. It utilizes advanced process technology to achieve ultra-low on-resistance per silicon area, providing efficient power handling in a compact D2PAK surface mount package.
Key electrical specifications include a maximum drain-source voltage of 55 V, continuous drain current of 110 A at 25°C (80 A at 100°C), and a pulsed drain current rating of 390 A. The device features a low on-resistance of 8 mOhm (max) at Vgs = 10 V, a gate threshold voltage range of 2 V to 4 V, and a maximum gate-source voltage of ±20 V. It is fully avalanche rated with a repetitive avalanche energy capability of 20 mJ and an avalanche current rating of 62 A.
Thermal characteristics include a maximum power dissipation of 200 W at Tc = 25°C, an operating junction temperature range of -55°C to 175°C, and thermal resistance values of 0.75 °C/W junction-to-case and 40 °C/W junction-to-ambient (PCB mounted). The device has a typical input capacitance of 3247 pF and a maximum gate charge of 146 nC, supporting fast switching performance.
The D2PAK (TO-263) package is surface mountable and suitable for high current applications due to its low internal connection resistance. The part is lead-free and listed as RoHS compliant (unverified).
The maximum drain-source voltage is 55 V.
The continuous drain current at Tc = 25°C is 110 A.
The operating junction temperature range is -55°C to 175°C.
The package is D2PAK (TO-263-3, D²Pak), surface mount.
It is listed as RoHS3 compliant, but this is unverified in the provided data.
The maximum on-resistance is 8 mOhm at Vgs = 10 V and Id = 62 A.
The gate threshold voltage is 2 V to 4 V at Id = 250 µA.