| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,589 pcs
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1589 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FQP20N06 is an N-Channel enhancement mode power MOSFET manufactured by ON Semiconductor. It features a drain-source breakdown voltage of 60V and a continuous drain current rating of 20A at case temperature. The device offers a low on-resistance of 60mOhm maximum at 10A gate drive, enabling efficient power switching.
This MOSFET is designed for through-hole mounting in the industry-standard TO-220-3 package. It can operate over a junction temperature range of -55°C to 175°C, making it suitable for demanding thermal environments. The maximum gate charge is 15nC at 10V, and the input capacitance is 590pF at 25V drain-source bias.
The FQP20N06 is well-suited for power management applications such as DC-DC converters, motor control, and load switching where high efficiency and reliability are required.
The drain-source breakdown voltage is 60V.
The continuous drain current is 20A at case temperature.
The maximum drain-source on-resistance is 60mOhm at 10A drain current and 10V gate drive.
The FQP20N06 is available in a TO-220-3 through-hole package.
The junction operating temperature range is -55°C to 175°C.