| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,590 pcs
|
1590 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STW28N60M2 is a high-performance N-Channel MOSFET. It offers a drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of 24A at a case temperature.
This MOSFET utilizes Metal Oxide Semiconductor (MOS) technology. Key electrical parameters include a maximum gate-source voltage of ±25V, a gate threshold voltage (Vgs(th)) of 4V at 250µA, and a maximum on-resistance (Rds On) of 150mOhm at 12A and 10V gate drive.
With a maximum power dissipation of 170W (Tc), it operates within a temperature range of -55°C to 150°C (TJ). The component is designed for through-hole mounting and comes in a TO-247-3 package.
Environmental compliance includes RoHS3 compliance, MSL 1, and REACH unaffected status.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 600V.
The continuous drain current is 24A at case temperature.
The maximum on-resistance is 150mOhm at 12A drain current and 10V gate-source voltage.
The gate charge is 37nC at a gate-source voltage of 10V.
The operating junction temperature range is -55°C to 150°C.
The STW28N60M2 is available in a TO-247-3 through-hole package.
The gate-source voltage rating is ±25V.