Mfr Part #:

IRFBG30

Mfr Name: Vishay

IRFBG30 is an N-Channel MOSFET by Vishay Dale with a drain-source voltage of 1000V and continuous drain current of 3.1A. It features a maximum Rds(on) of 5Ω at 10V gate drive.

✓ Total Stock: 1,586 pcs

IRFBG30 Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Smaxon Electronics ✓ Non-Authorised Inventory information	1,559 pcs On Request	1559 pcs	On Request	1	On Request	On Request	0615+	On Request	On Request
Partservice ✓ Non-Authorised Inventory information	27 pcs On Request	27 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

IRFBG30 Description

Short technical summary and product information.

The IRFBG30 is an N-Channel enhancement-mode MOSFET manufactured by Vishay Dale. It offers a drain-source breakdown voltage of 1000V and a continuous drain current of 3.1A (at Tc). The device is designed for high-voltage switching applications.

The maximum on-resistance is specified at 5Ω when driven with 10V gate voltage (at 1.9A). The gate threshold voltage is a maximum of 4V at 250µA drain current. Typical gate charge (Qg) is 80 nC at Vgs=10V, and input capacitance (Ciss) is 980 pF at Vds=25V, supporting efficient gate drive design.

The MOSFET is housed in a through-hole TO-220-3 package (supplier package TO-220AB) and operates over a junction temperature range of -55°C to 150°C. Maximum power dissipation is 125W at Tc. The ±20V maximum gate-source voltage provides flexibility in drive circuits.

This device is suitable for high-voltage switch-mode power supplies, DC-DC converters, motor drives, and other industrial applications requiring rugged N-channel switching.

IRFBG30 Quick Information

Product Type: N-Channel MOSFET

Series: IRFBG30

Canonical Name: IRFBG30 N-Channel MOSFET, 1000V, 3.1A, TO-220-3

Subcategory: N-Channel MOSFET

IRFBG30 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 (Unlimited)

REACH Status: REACH Unaffected

Lead Free: Yes

IRFBG30 Features

1000V drain-source breakdown voltage.
3.1A continuous drain current rating.
5Ω maximum on-resistance at 10V drive.
Through-hole TO-220-3 package.
Operating temperature -55°C to 150°C.

IRFBG30 Applications

Used in high-voltage DC-DC converters.
Suitable for switch-mode power supplies.
Ideal for motor drive inverters.
Common in push-pull and half-bridge topologies.

IRFBG30 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage (Vds) of the IRFBG30?

The maximum drain-source voltage (Vdss) is 1000V.

What is the maximum continuous drain current of the IRFBG30?

The continuous drain current is 3.1A at Tc.

What is the operating junction temperature range?

The operating junction temperature ranges from -55°C to 150°C.

What package is the IRFBG30 available in?

It is available in the TO-220-3 through-hole package (supplier device package TO-220AB).

Is the IRFBG30 RoHS compliant?

RoHS status is declared as RoHS3 compliant but is unverified; confidence is low.

What is the maximum Rds(on) of the IRFBG30?

The maximum drain-source on-resistance is 5Ω at Vgs=10V and Id=1.9A.

What is the gate threshold voltage?

The maximum gate threshold voltage is 4V at Id=250µA.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Vishay
AEC Qualified	No
Automotive Grade	No
Current	3.1A (Tc)
Drain to Source Voltage (Vdss)	1000 V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	80 nC @ 10 V
Halogen Free	No
Industrial Grade	Yes
Input Capacitance (Ciss) (Max) @ Vds	980 pF @ 25 V
Lead Style	Through Hole
Medical Grade	No
Military Grade	No
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	125W (Tc)
Rds On (Max) @ Id, Vgs	5Ohm @ 1.9A, 10V
SVHC Present	Not Present
Supplier Device Package	TO-220AB
Tape & Reel	No
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4V @ 250µA