| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,597 pcs
|
1597 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NTMFS5C673NLT1G from On Semiconductor is an N-channel MOSFET designed for power applications. It offers a drain-to-source voltage (Vdss) of 60V and can handle a continuous current of up to 50A (Tc). The MOSFET exhibits a low on-state resistance (Rds On) of 9.2mOhm at a gate-source voltage (Vgs) of 10V and a drain current (Id) of 25A.
This device operates within a temperature range of -55°C to 175°C (TJ). Key electrical parameters include an input capacitance (Ciss) of 880 pF at 25V and a gate charge (Qg) of 9.5 nC at 10V. The maximum gate-to-source voltage is ±20V, with a gate threshold voltage (Vgs(th)) of 2V at 35µA.
The NTMFS5C673NLT1G is housed in a surface mountable 8-PowerTDFN, 5-lead package, specifically a 5-DFN (5x6) (8-SOFL) supplier device package. Its power dissipation is rated at 3.6W (Ta) and 46W (Tc).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 60 V.
The maximum continuous current rating is 50A (Tc).
The Rds On is a maximum of 9.2mOhm at 25A, 10V.
The operating temperature range is -55°C to 175°C (TJ).
It is in an 8-PowerTDFN, 5-lead package, specifically a 5-DFN (5x6) (8-SOFL) supplier device package.