| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,577 pcs
|
1577 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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The AUIRF7759L2TR is an N-Channel power MOSFET from Infineon Technologies designed for high-current switching applications. It features a maximum drain-source voltage of 75V and a continuous drain current of 375A at case temperature 25°C.
Key electrical characteristics include a typical on-resistance of 2.3mOhm at 96A and 10V gate drive, with a maximum gate charge of 300nC at 10V. The device operates over a junction temperature range of -55°C to 175°C.
The MOSFET is housed in a DirectFET Isometric L8 surface-mount package, offering low thermal resistance and compact footprint. It is suitable for applications requiring high efficiency and power density.
| Qty | Low | High |
|---|---|---|
| 1+ | $11.48 | $11.48 |
| 10+ | $7.91 | $7.91 |
| 50+ | $6.38 | $6.38 |
| 100+ | $5.72 | $5.72 |
| 4,000+ | $4.68 | $4.68 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
75V.
DirectFET Isometric L8 surface-mount package.
-55°C to 175°C junction temperature.
RoHS3 compliant (unverified).
375A at case temperature 25°C.
2.3mOhm at 96A and 10V gate drive.
300nC at 10V gate voltage.