Transistors - FETs, MOSFETs - Single DistyParts

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Transistors - FETs, MOSFETs - Single facilitate the control of electrical signals in various electronic applications. Key attributes include Current, Drain to Source Voltage (Vdss), and Drive Voltage (Max Rds On, Min Rds On). These components are essential for industrial power management and new product design.

What are Transistors - FETs, MOSFETs - Single ?

Transistors - FETs, MOSFETs - Single are semiconductor devices that control the flow of electrical current in a circuit. They are commonly used in applications such as industrial power management and production electronics assembly. Important specifications for selection include Current, which determines the load capacity; Drain to Source Voltage (Vdss), which affects the voltage handling capability; and Drive Voltage (Max Rds On, Min Rds On), which influences efficiency and heat generation. Ensuring compatibility with existing designs and validating lifecycle status are crucial for procurement teams.

Part & Mfr

Total Stock

Pricing & RFQ

Current

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On, Min Rds On)

FET Feature

FET Type

Gate Charge (Qg) (Max) @ Vgs

Input Capacitance (Ciss) (Max) @ Vds

Mounting Type

Operating Temperature

Power Dissipation (Max)

Rds On (Max) @ Id, Vgs

Supplier Device Package

Technology

Vgs (Max)

Vgs(th) (Max) @ Id

SQD97N06-6M3L_GE3

Vishay

4,000

Price on request

4,000

97A (Tc)

60 V

4.5V, 10V

N-Channel

125 nC @ 10 V

6060 pF @ 25 V

Surface Mount

-55°C ~ 175°C (TJ)

136W (Tc)

6.3mOhm @ 25A, 10V

TO-252AA

MOSFET (Metal Oxide)

±20V

2.5V @ 250µA

DN2625K4-G

Microchip Technology

4,000

Price on request

4,000

1.1A (Tj)

250 V

Depletion Mode

N-Channel

7.04 nC @ 1.5 V

1000 pF @ 25 V

Surface Mount

-55°C ~ 150°C (TJ)

3.5Ohm @ 1A, 0V

TO-252, (D-Pak)

MOSFET (Metal Oxide)

±20V

STW21NM60ND

STMicroelectronics

4,000

From Optech Co.,Limited

Price on request

4,000

17A (Tc)

600 V

10V

N-Channel

60 nC @ 10 V

1800 pF @ 50 V

Through Hole

150°C (TJ)

140W (Tc)

220mOhm @ 8.5A, 10V

TO-247-3

MOSFET (Metal Oxide)

±25V

5V @ 250µA

FDS2672

On Semiconductor

4,000

From Optech Co.,Limited

Price on request

4,000

3.9A (Ta)

200 V

6V, 10V

N-Channel

46 nC @ 10 V

2535 pF @ 100 V

Surface Mount

-55°C ~ 150°C (TJ)

2.5W (Ta)

70mOhm @ 3.9A, 10V

8-SOIC

MOSFET (Metal Oxide)

±20V

4V @ 250µA

FCPF220N80

On Semiconductor

4,000

Price on request

4,000

23A (Tc)

800 V

10V

N-Channel

105 nC @ 10 V

4560 pF @ 100 V

Through Hole

-55°C ~ 150°C (TJ)

44W (Tc)

220mOhm @ 11.5A, 10V

TO-220F

MOSFET (Metal Oxide)

±20V

4.5V @ 2.3mA

SCT040H65G3AG

STMicroelectronics

4,000

Price on request

4,000

30A (Tc)

650 V

15V, 18V

N-Channel

39.5 nC @ 18 V

920 pF @ 400 V

Surface Mount

-55°C ~ 175°C (TJ)

221W (Tc)

55mOhm @ 20A, 18V

H2PAK-7

SiCFET (Silicon Carbide)

+18V, -5V

4.2V @ 1mA

STB14NM50N

STMicroelectronics

4,000

Price on request

4,000

12A (Tc)

500 V

10V

N-Channel

27 nC @ 10 V

816 pF @ 50 V

Surface Mount

150°C (TJ)

90W (Tc)

320mOhm @ 6A, 10V

D2PAK

MOSFET (Metal Oxide)

±25V

4V @ 100µA

IRFB4332PBF

Infineon Technologies

4,000

Across 2 distributors

Distributor	Stock	MOQ	Country
Components Technology Group, Inc.	3,600	-	-
Risen Electronics	400	-	-

Price on request

4,000

Distributor	Stock	MOQ	Country
Components Technology Group, Inc.	3,600	-	-
Risen Electronics	400	-	-

60A (Tc)

250 V

10V

N-Channel

150 nC @ 10 V

5860 pF @ 25 V

Through Hole

-40°C ~ 175°C (TJ)

390W (Tc)

33mOhm @ 35A, 10V

TO-220AB

MOSFET (Metal Oxide)

±30V

5V @ 250µA

TN2106K1-G

Microchip Technology

4,000

Price on request

4,000

280mA (Tj)

60 V

4.5V, 10V

N-Channel

50 pF @ 25 V

Surface Mount

-55°C ~ 150°C (TJ)

360mW (Tc)

2.5Ohm @ 500mA, 10V

TO-236AB (SOT23)

MOSFET (Metal Oxide)

±20V

2V @ 1mA

FDMA86251

On Semiconductor

4,000

From Optech Co.,Limited

Price on request

4,000

2.4A (Ta)

150 V

6V, 10V

N-Channel

5.8 nC @ 10 V

363 pF @ 75 V

Surface Mount

-55°C ~ 150°C (TJ)

2.4W (Ta)

175mOhm @ 2.4A, 10V

6-MicroFET (2x2)

MOSFET (Metal Oxide)

±20V

4V @ 250µA

IRF9Z34PBF

Vishay

4,000

From Components Technology Group, Inc.

Price on request

4,000

18A (Tc)

60 V

10V

P-Channel

34 nC @ 10 V

1100 pF @ 25 V

Through Hole

-55°C ~ 175°C (TJ)

88W (Tc)

140mOhm @ 11A, 10V

TO-220AB

MOSFET (Metal Oxide)

±20V

4V @ 250µA

NTMTSC1D6N10MCTXG

On Semiconductor

4,000

Across 2 distributors

Distributor	Stock	MOQ	Country
Braun Electronic Components	1,000	-	-
Flip Electronics	3,000	-	-

Price on request

4,000

Distributor	Stock	MOQ	Country
Braun Electronic Components	1,000	-	-
Flip Electronics	3,000	-	-

35A (Ta), 267A (Tc)

100 V

N-Channel

106 nC @ 10 V

7630 pF @ 50 V

Surface Mount, Wettable Flank

-55°C ~ 175°C (TJ)

5.1W (Ta), 291W (Tc)

1.7mOhm @ 90A, 10V

8-TDFNW (8.3x8.4)

MOSFET (Metal Oxide)

±20V

4V @ 650µA

STB9NK90Z

STMicroelectronics

4,000

Price on request

4,000

8A (Tc)

900 V

10V

N-Channel

72 nC @ 10 V

2115 pF @ 25 V

Surface Mount

-55°C ~ 150°C (TJ)

160W (Tc)

1.3Ohm @ 3.6A, 10V

D2PAK

MOSFET (Metal Oxide)

±30V

4.5V @ 100µA

IRFZ46NPBF

Infineon Technologies

4,000

From Components Technology Group, Inc.

Price on request

4,000

53A (Tc)

55 V

10V

N-Channel

72 nC @ 10 V

1696 pF @ 25 V

Through Hole

-55°C ~ 175°C (TJ)

107W (Tc)

16.5mOhm @ 28A, 10V

TO-220AB

MOSFET (Metal Oxide)

±20V

4V @ 250µA

FDP6670AL

On Semiconductor

4,000

From Components Technology Group, Inc.

Price on request

4,000

80A (Ta)

30 V

4.5V, 10V

N-Channel

33 nC @ 5 V

2440 pF @ 15 V

Through Hole

-65°C ~ 175°C (TJ)

68W (Tc)

6.5mOhm @ 40A, 10V

TO-220-3

MOSFET (Metal Oxide)

±20V

3V @ 250µA

STB24NM60N

STMicroelectronics

4,000

Price on request

4,000

17A (Tc)

600 V

10V

N-Channel

46 nC @ 10 V

1400 pF @ 50 V

Surface Mount

-55°C ~ 150°C (TJ)

125W (Tc)

190mOhm @ 8A, 10V

D²PAK (TO-263)

MOSFET (Metal Oxide)

±30V

4V @ 250µA

RFP50N06

Harris Semiconductor

4,000

From Components Technology Group, Inc.

Price on request

4,000

50A (Tc)

60 V

10V

N-Channel

150 nC @ 20 V

2020 pF @ 25 V

Through Hole

-55°C ~ 175°C (TJ)

131W (Tc)

22mOhm @ 50A, 10V

TO-220-3

MOSFET (Metal Oxide)

±20V

4V @ 250µA

IXKN45N80C

IXYS

4,000

From Components Technology Group, Inc.

Price on request

4,000

44A (Tc)

800 V

10V

N-Channel

360 nC @ 10 V

Chassis Mount

-55°C ~ 150°C (TJ)

380W (Tc)

74mOhm @ 44A, 10V

SOT-227B

MOSFET (Metal Oxide)

±20V

3.9V @ 4mA

IRF830

Harris Semiconductor

4,000

From Components Technology Group, Inc.

Price on request

4,000

4.5A (Tc)

500 V

N-Channel

32 nC @ 10 V

600 pF @ 25 V

Through Hole

-55°C ~ 150°C (TJ)

75W (Tc)

1.5Ohm @ 2.5A, 10V

TO-220AB

MOSFET (Metal Oxide)

±20V

4V @ 250µA

FQP9N90C

On Semiconductor

4,000

From Components Technology Group, Inc.

Price on request

4,000

8A (Tc)

900 V

10V

N-Channel

58 nC @ 10 V

2730 pF @ 25 V

Through Hole

-55°C ~ 150°C (TJ)

205W (Tc)

1.4Ohm @ 4A, 10V

TO-220-3

MOSFET (Metal Oxide)

±30V

5V @ 250µA

IRFH5406TRPBF

Infineon Technologies

4,000

Price on request

4,000

11A (Ta), 40A (Tc)

60 V

10V

N-Channel

35 nC @ 10 V

1256 pF @ 25 V

Surface Mount

-55°C ~ 150°C (TJ)

3.6W (Ta), 46W (Tc)

14.4mOhm @ 24A, 10V

8-PQFN (5x6)

MOSFET (Metal Oxide)

±20V

4V @ 50µA

NTMTS6D0N15MC

On Semiconductor

4,000

Across 2 distributors

Distributor	Stock	MOQ	Country
Braun Electronic Components	1,000	-	-
Flip Electronics	3,000	-	-

Price on request

4,000

Distributor	Stock	MOQ	Country
Braun Electronic Components	1,000	-	-
Flip Electronics	3,000	-	-

19A (Ta), 135A (Tc)

150 V

8V, 10V

N-Channel

58 nC @ 10 V

4815 pF @ 75 V

Surface Mount

-55°C ~ 175°C (TJ)

4.9W (Ta), 245W (Tc)

6.4mOhm @ 69A, 10V

8-DFNW (8.3x8.4)

MOSFET (Metal Oxide)

±20V

4.5V @ 379µA

IRF8714TRPBF

Infineon Technologies

4,000

From Speed Components Ltd

Price on request

4,000

14A (Ta)

30 V

4.5V, 10V

N-Channel

12 nC @ 4.5 V

1020 pF @ 15 V

Surface Mount

-55°C ~ 150°C (TJ)

2.5W (Ta)

8.7mOhm @ 14A, 10V

8-SO

MOSFET (Metal Oxide)

±20V

2.35V @ 25µA

FQT13N06TF

On Semiconductor

4,000

Price on request

4,000

2.8A (Tc)

60 V

10V

N-Channel

7.5 nC @ 10 V

310 pF @ 25 V

Surface Mount

-55°C ~ 150°C (TJ)

2.1W (Tc)

140mOhm @ 1.4A, 10V

SOT-223-4

MOSFET (Metal Oxide)

±25V

4V @ 250µA

IXTQ50N25T

IXYS

4,000

From Optech Co.,Limited

Price on request

4,000

50A (Tc)

250 V

10V

N-Channel

78 nC @ 10 V

4000 pF @ 25 V

Through Hole

-55°C ~ 150°C (TJ)

400W (Tc)

60mOhm @ 25A, 10V

TO-3P

MOSFET (Metal Oxide)

±30V

5V @ 1mA

IRF9310PBF

Infineon Technologies

4,000

From Components Technology Group, Inc.

Price on request

4,000

20A (Tc)

30 V

4.5V, 10V

P-Channel

165 nC @ 10 V

5250 pF @ 15 V

Surface Mount

-55°C ~ 150°C (TJ)

2.5W (Ta)

4.6mOhm @ 20A, 10V

8-SO

MOSFET (Metal Oxide)

±20V

2.4V @ 100µA

FDWS9510L-F085

On Semiconductor

4,000

From Optech Co.,Limited

Price on request

4,000

50A (Tc)

40 V

4.5V, 10V

P-Channel

37 nC @ 10 V

2320 pF @ 20 V

Surface Mount

-55°C ~ 175°C (TJ)

75W (Tj)

13.5mOhm @ 50A, 10V

8-DFN (5.1x6.3)

MOSFET (Metal Oxide)

±16V

3V @ 250µA

NVMFS5A160PLZWFT1G

On Semiconductor

4,000

From Optech Co.,Limited

Price on request

4,000

15A (Ta), 100A (Tc)

60 V

4.5V, 10V

P-Channel

160 nC @ 10 V

7700 pF @ 20 V

Surface Mount

-55°C ~ 175°C (TJ)

3.8W (Ta), 200W (Tc)

7.7mOhm @ 50A, 10V

5-DFN (5x6) (8-SOFL)

MOSFET (Metal Oxide)

±20V

2.6V @ 1mA

APT6030BN

Microsemi Corporation

4,000

From Components Technology Group, Inc.

Price on request

4,000

23A (Tc)

600 V

10V

N-Channel

210 nC @ 10 V

3500 pF @ 25 V

Through Hole

-55°C ~ 150°C (TJ)

360W (Tc)

300mOhm @ 11.5A, 10V

TO-247AD

MOSFET (Metal Oxide)

±30V

4V @ 1mA

FDPF39N20TLDTU

On Semiconductor

4,000

Price on request

4,000

39A (Tc)

200 V

10V

N-Channel

49 nC @ 10 V

2130 pF @ 25 V

Through Hole

-55°C ~ 150°C (TJ)

37W (Tc)

66mOhm @ 19.5A, 10V

TO-220F

MOSFET (Metal Oxide)

±30V

5V @ 250µA

FDPF5N50NZF

On Semiconductor

4,000

Price on request

4,000

4.2A (Tc)

500 V

10V

N-Channel

12 nC @ 10 V

485 pF @ 25 V

Through Hole

-55°C ~ 150°C (TJ)

30W (Tc)

1.75Ohm @ 2.1A, 10V

TO-220F-3

MOSFET (Metal Oxide)

±25V

5V @ 250µA

IRF7834PBF

Infineon Technologies

4,000

From Components Technology Group, Inc.

Price on request

4,000

19A (Ta)

30 V

4.5V, 10V

N-Channel

44 nC @ 4.5 V

3710 pF @ 15 V

Surface Mount

-55°C ~ 150°C (TJ)

2.5W (Ta)

4.5mOhm @ 19A, 10V

8-SO

MOSFET (Metal Oxide)

±20V

2.25V @ 250µA

FQI5N60CTU

On Semiconductor

4,000

Price on request

4,000

4.5A (Tc)

600 V

10V

N-Channel

19 nC @ 10 V

670 pF @ 25 V

Through Hole

-55°C ~ 150°C (TJ)

3.13W (Ta), 100W (Tc)

2.5Ohm @ 2.25A, 10V

I2PAK (TO-262)

MOSFET (Metal Oxide)

±30V

4V @ 250µA

IRLR4343PBF

Infineon Technologies

4,000

From Components Technology Group, Inc.

Price on request

4,000

26A (Tc)

55 V

4.5V, 10V

N-Channel

42 nC @ 10 V

740 pF @ 50 V

Surface Mount

-40°C ~ 175°C (TJ)

79W (Tc)

50mOhm @ 4.7A, 10V

D-Pak

MOSFET (Metal Oxide)

±20V

1V @ 250µA

IRF7420PBF

Infineon Technologies

4,000

From Components Technology Group, Inc.

Price on request

4,000

11.5A (Tc)

12 V

1.8V, 4.5V

P-Channel

38 nC @ 4.5 V

3529 pF @ 10 V

Surface Mount

-55°C ~ 150°C (TJ)

2.5W (Ta)

14mOhm @ 11.5A, 4.5V

8-SO

MOSFET (Metal Oxide)

±8V

900mV @ 250µA

IPW60R125CP

Infineon Technologies

4,000

From Components Technology Group, Inc.

Price on request

4,000

25A (Tc)

600 V

10V

N-Channel

70 nC @ 10 V

2500 pF @ 100 V

Through Hole

-55°C ~ 150°C (TJ)

208W (Tc)

125mOhm @ 16A, 10V

PG-TO247-3-21

MOSFET (Metal Oxide)

±20V

3.5V @ 1.1mA

IXTT96N20P

IXYS

4,000

From Components Technology Group, Inc.

Price on request

4,000

96A (Tc)

200 V

10V

N-Channel

145 nC @ 10 V

4800 pF @ 25 V

Surface Mount

-55°C ~ 175°C (TJ)

600W (Tc)

24mOhm @ 500mA, 10V

TO-268AA

MOSFET (Metal Oxide)

±20V

5V @ 250µA

NVBGS6D5N15MC

On Semiconductor

4,000

Price on request

4,000

15A (Ta), 121A (Tc)

150 V

8V, 10V

N-Channel

57 nC @ 10 V

4745 pF @ 75 V

Surface Mount

-55°C ~ 175°C (TJ)

3.7W (Ta), 238W (Tc)

7mOhm @ 69A, 10V

D2PAK (TO-263)

MOSFET (Metal Oxide)

±20V

4.5V @ 379µA

IRF1405SPBF

Infineon Technologies

4,000

From Components Technology Group, Inc.

Price on request

4,000

131A (Tc)

55 V

10V

N-Channel

260 nC @ 10 V

5480 pF @ 25 V

Surface Mount

-55°C ~ 175°C (TJ)

200W (Tc)

5.3mOhm @ 101A, 10V

D2PAK

MOSFET (Metal Oxide)

±20V

4V @ 250µA

SPB07N60C3

Infineon Technologies

4,000

From Components Technology Group, Inc.

Price on request

4,000

7.3A (Tc)

600 V

10V

N-Channel

27 nC @ 10 V

790 pF @ 25 V

Surface Mount

-55°C ~ 150°C (TJ)

83W (Tc)

600mOhm @ 4.6A, 10V

PG-TO263-3-2

MOSFET (Metal Oxide)

±20V

3.9V @ 350µA

IRFB11N50A

Vishay

4,000

From Components Technology Group, Inc.

Price on request

4,000

11A (Tc)

500 V

10V

N-Channel

52 nC @ 10 V

1423 pF @ 25 V

Through Hole

-55°C ~ 150°C (TJ)

170W (Tc)

520mOhm @ 6.6A, 10V

TO-220AB

MOSFET (Metal Oxide)

±30V

4V @ 250µA

IRF7842TR

Infineon Technologies

4,000

From Components Technology Group, Inc.

Price on request

4,000

18A (Ta)

40 V

4.5V, 10V

N-Channel

50 nC @ 4.5 V

4500 pF @ 20 V

Surface Mount

-55°C ~ 150°C (TJ)

2.5W (Ta)

5mOhm @ 17A, 10V

8-SO

MOSFET (Metal Oxide)

±20V

2.25V @ 250µA

FQP13N06L

On Semiconductor

4,000

Price on request

4,000

13.6A (Tc)

60 V

5V, 10V

N-Channel

6.4 nC @ 5 V

350 pF @ 25 V

Through Hole

-55°C ~ 175°C (TJ)

45W (Tc)

110mOhm @ 6.8A, 10V

TO-220-3

MOSFET (Metal Oxide)

±20V

2.5V @ 250µA

IRF9Z34NSPBF

Infineon Technologies

4,000

From Components Technology Group, Inc.

Price on request

4,000

19A (Tc)

55 V

10V

P-Channel

35 nC @ 10 V

620 pF @ 25 V

Surface Mount

-55°C ~ 175°C (TJ)

3.8W (Ta), 68W (Tc)

100mOhm @ 10A, 10V

D2PAK

MOSFET (Metal Oxide)

±20V

4V @ 250µA

IRFP044NPBF

Infineon Technologies

4,000

From Components Technology Group, Inc.

Price on request

4,000

53A (Tc)

55 V

10V

N-Channel

61 nC @ 10 V

1500 pF @ 25 V

Through Hole

-55°C ~ 175°C (TJ)

120W (Tc)

20mOhm @ 29A, 10V

TO-247AC

MOSFET (Metal Oxide)

±20V

4V @ 250µA

SPD35N10

Infineon Technologies

4,000

From Components Technology Group, Inc.

Price on request

4,000

35A (Tc)

100 V

10V

N-Channel

65 nC @ 10 V

1570 pF @ 25 V

Surface Mount

-55°C ~ 175°C (TJ)

150W (Tc)

44mOhm @ 26.4A, 10V

PG-TO252-3

MOSFET (Metal Oxide)

±20V

IRF7322D1TR

Infineon Technologies

3,996

From Hybrid Electronics

Price on request

3,996

5.3A (Ta)

20 V

2.7V, 4.5V

Schottky Diode (Isolated)

P-Channel

29 nC @ 4.5 V

780 pF @ 15 V

Surface Mount

-55°C ~ 150°C (TJ)

2W (Ta)

62mOhm @ 2.9A, 4.5V

8-SO

MOSFET (Metal Oxide)

±12V

700mV @ 250µA (Min)

DMP4025LSS-13

Diodes Incorporated

3,996

Across 2 distributors

Distributor	Stock	MOQ	Country
Braun Electronic Components	1,998	-	-
MW.FEP S.p.A.	1,998	-	-

Price on request

3,996

Distributor	Stock	MOQ	Country
Braun Electronic Components	1,998	-	-
MW.FEP S.p.A.	1,998	-	-

6A (Ta)

40 V

4.5V, 10V

P-Channel

33.7 nC @ 10 V

1640 pF @ 20 V

Surface Mount

-55°C ~ 150°C (TJ)

1.52W (Ta)

25mOhm @ 3A, 10V

8-SO

MOSFET (Metal Oxide)

±20V

1.8V @ 250µA

SI4483ADY-T1-GE3

Vishay

3,988

Price on request

3,988

19.2A (Tc)

30 V

4.5V, 10V

P-Channel

135 nC @ 10 V

3900 pF @ 15 V

Surface Mount

-55°C ~ 150°C (TJ)

2.9W (Ta), 5.9W (Tc)

8.8mOhm @ 10A, 10V

8-SOIC

MOSFET (Metal Oxide)

±25V

2.6V @ 250µA

AON7506

ALPHA & OMEGA SEMICONDU CTOR

3,987

Price on request

3,987

12A (Ta), 12A (Tc)

30 V

4.5V, 10V

N-Channel

12.2 nC @ 10 V

542 pF @ 15 V

Surface Mount

-55°C ~ 150°C (TJ)

3.1W (Ta), 20.5W (Tc)

9.8mOhm @ 12A, 10V

8-DFN-EP (3x3)

MOSFET (Metal Oxide)

±20V

2.3V @ 250µA

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About Transistors - FETs, MOSFETs - Single

Transistors - FETs, MOSFETs - Single are essential components in the realm of discrete semiconductor products, providing critical functionality in electronic circuits. These transistors are designed to handle various electrical parameters, making them suitable for applications ranging from industrial power management to new product design and prototyping.

When sourcing FETs and MOSFETs, it is crucial to compare key specifications such as Current, Drain to Source Voltage (Vdss), and Drive Voltage (Max Rds On, Min Rds On). Understanding these attributes will help ensure that the selected components meet the specific requirements of your application.

Applications for these transistors include production electronics assembly, maintenance and field replacement, as well as engineering evaluation and qualification. They are vital in ensuring reliable performance in various electronic systems.

Buyers should prioritize parametric filtering to reduce sourcing risk and confirm mechanical and electrical compatibility with existing design constraints. It is advisable to validate lifecycle status and explore alternate-source options before submitting a Request for Quotation (RFQ).

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Transistors - FETs, MOSFETs - Single

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Transistors - FETs, MOSFETs - Single

What are Transistors - FETs, MOSFETs - Single ?

About Transistors - FETs, MOSFETs - Single

About Us

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Account

Store

Contact Us

Categories