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ATP113-TL-H ATP113-TL-H is a P-Channel MOSFET from On Semiconductor, rated for 60V drain-source voltage and 35A drain current. It features a low on-resistance of 29.5mΩ and comes in an ATPAK surface-mount package.
Mfr Part #:

ATP113-TL-H

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
ATP113-TL-H is a P-Channel MOSFET from On Semiconductor, rated for 60V drain-source voltage and 35A drain current. It features a low on-resistance of 29.5mΩ and comes in an ATPAK surface-mount package.
✓ Total Stock: 6,251 pcs
$ Price Range: $0.84 - $2.59

ATP113-TL-H Available from 1 distributor

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✓ Non-Authorised
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Xingangxin ✓
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6,251 pcs
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ATP113-TL-H Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
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ATP113-TL-H Description

Short technical summary and product information.

ATP113-TL-H is a P-Channel MOSFET designed for power switching applications. It offers a maximum drain-source voltage of 60V and a continuous drain current of 35A at ambient temperature. The device features a low on-resistance of 29.5mΩ at Vgs=10V and Id=18A, enabling efficient power handling and reduced conduction losses.

 

This MOSFET uses metal-oxide semiconductor technology and is housed in an ATPAK (2 leads+tab) surface-mount package. It supports a maximum gate-source voltage of ±20V and requires a drive voltage of 4V or 10V for optimal operation. The input capacitance is 2400pF at Vds=20V, and the total gate charge is 55nC at Vgs=10V, making it suitable for high-frequency switching.

 

The device can dissipate up to 50W of power and operates at junction temperatures up to 150°C. It is listed as RoHS3 compliant and has an MSL rating of 1 (unlimited). This combination of electrical and thermal characteristics makes it suitable for a range of power management and load switching applications.

ATP113-TL-H Quick Information

Product Type: MOSFET
Canonical Name: P-Channel MOSFET, 60V Vds, 35A Id, ATPAK package
Subcategory: P-Channel MOSFET

ATP113-TL-H Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

ATP113-TL-H Estimated Pricing

Qty Low High
1+ $2.59 $2.59
10+ $1.67 $1.67
100+ $1.14 $1.14
500+ $0.91 $0.91
1,000+ $0.84 $0.84

Estimated market price range - modelled values for guidance only, not live distributor offers.

ATP113-TL-H Features

  • P-Channel MOSFET rated for 60V drain-source.
  • Supports up to 35A continuous drain current.
  • Low on-resistance of 29.5mΩ at 10V.
  • Surface-mount ATPAK package for compact designs.

ATP113-TL-H Applications

  • Used for high-side load switching applications.
  • Suitable for power management circuits.
  • Common in battery-powered device designs.

ATP113-TL-H FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of ATP113-TL-H?

60V.

What is the package type of ATP113-TL-H?

Surface mount, ATPAK (2 leads+tab) package.

What is the maximum operating temperature?

150°C (junction temperature).

Is ATP113-TL-H RoHS compliant?

Yes, it is listed as RoHS3 compliant, but this is unverified.

What is the maximum drain current?

35A (at ambient temperature condition).

What is the on-resistance of ATP113-TL-H?

29.5mΩ max at Id=18A, Vgs=10V.

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