| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,500 pcs
|
4500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,589 pcs
|
1589 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IXYS IXTQ96N20P is an N-Channel Power MOSFET with a maximum drain-source voltage (Vdss) of 200V. It is rated for a continuous drain current of 96A at 25°C case temperature and can dissipate up to 600W of power.
This MOSFET features a low on-resistance of 24mOhm maximum at 500mA drain current and 10V gate-source voltage. The gate threshold voltage (Vgs(th)) is a maximum of 5V at 250µA. Its input capacitance (Ciss) is rated at 4800pF maximum at 25V, and the gate charge (Qg) is 145nC maximum at 10V.
The IXTQ96N20P operates within a temperature range of -55°C to 175°C (TJ). It is housed in a TO-3P package and utilizes a Through Hole mounting type, making it suitable for various power management applications.
Key electrical characteristics include a maximum gate-source voltage (Vgs) of ±20V and a drive voltage requirement of 10V. The technology employed is MOSFET (Metal Oxide), and it is classified as an N-Channel FET type.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) for the IXTQ96N20P is 200V.
The continuous drain current (Id) for the IXTQ96N20P at 25°C is 96A.
The maximum Rds On for the IXTQ96N20P is 24mOhm when measured at 500mA drain current and 10V gate-source voltage.
The operating temperature range (TJ) for the IXTQ96N20P is -55°C to 175°C.
The IXTQ96N20P MOSFET is supplied in a TO-3P package.
The IXTQ96N20P MOSFET is mounted using the Through Hole method.