| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,020 pcs
|
3020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STP6N80K5 is an N-Channel MOSFET designed for power switching applications. It offers a high drain-source voltage rating of 800V and can handle a continuous drain current of 4.5A at case temperature.
Key electrical characteristics include a maximum on-resistance of 1.6 Ohm at 2A drain current and 10V gate-source voltage. The gate charge is specified at 7.5 nC maximum, and input capacitance is 255 pF maximum. The gate threshold voltage is 5V maximum at 100µA.
This MOSFET operates within a temperature range of -55°C to 150°C. It is housed in a TO-220-3 package and utilizes through-hole mounting.
The STP6N80K5 is built using MOSFET (Metal Oxide) technology.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 800V.
The STP6N80K5 comes in a TO-220-3 through-hole package.
The operating junction temperature range is -55°C to 150°C.
The maximum continuous drain current is 4.5A at case temperature.
The maximum on-resistance is 1.6 Ohm at 2A and 10V gate-source voltage.
The maximum gate threshold voltage is 5V at 100µA.
The mounting type is through-hole.