| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,049 pcs
|
4049 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,086 pcs
|
1086 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NTHL160N120SC1 from ON Semiconductor is an EliteSiC MOSFET designed for high-performance applications. This N-channel device features a 1200V drain-to-source voltage (Vdss) and a maximum continuous drain current of 17A at 25°C.
Key electrical characteristics include a typical on-resistance (Rds(on)) of 160 mOhm at 12A and 20V gate-source voltage, and a low gate charge (Qg) of 34 nC. The device also offers a low effective output capacitance (Coss) of 50 pF.
This MOSFET operates within a temperature range of -55°C to +175°C and has a power dissipation of 119W at 25°C. It is housed in a TO-247-3 package, suitable for through-hole mounting.
Typical applications for the NTHL160N120SC1 include Uninterruptible Power Supplies (UPS), DC-DC converters, and boost inverters.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 1200 V.
The typical on-resistance (Rds(on)) is 160 mOhm at a drain current of 12A and gate-source voltage of 20V.
The maximum gate charge (Qg) is 34 nC at a gate-source voltage of 20V.
The operating temperature range is -55°C to +175°C.
The MOSFET is supplied in a TO-247-3 package.